DARLINGTON WITH BUILT-IN DIODE Small Signal Bipolar Junction Transistors (BJT) 7

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5390

Texas Instruments

NPN

DARLINGTON WITH BUILT-IN DIODE

NO

1 W

2 A

METAL

SWITCHING

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

1000

200 Cel

SILICON

80 V

BOTTOM

O-MBCY-W4

COLLECTOR

Not Qualified

TO-33

NOT SPECIFIED

NOT SPECIFIED

2SC4491

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE

NO

1.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

1000

SILICON

50 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSIP-T3

Not Qualified

2SC4491-AN

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE

NO

1.2 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

1000

SILICON

50 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSIP-T3

Not Qualified

DXT13003DG-13

Diodes Incorporated

NPN

DARLINGTON WITH BUILT-IN DIODE

YES

4 MHz

1.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

5

SILICON

450 V

3700 ns

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

260

TPCP8L01

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE

YES

.9 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

SILICON

120 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

KSB907

Samsung

PNP

DARLINGTON WITH BUILT-IN DIODE

NO

15 W

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

2000

150 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

KSD1222

Samsung

NPN

DARLINGTON WITH BUILT-IN DIODE

NO

15 W

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

2000

150 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395