SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR Small Signal Bipolar Junction Transistors (BJT) 2,394

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934049950115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

PURE TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

934055239115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

PURE TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21

PEMF21

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

280 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

934059928115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-F6

PBLS2004D

NXP Semiconductors

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

185 MHz

.6 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

20 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e3

30

260

934049930135

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 1

AEC-Q101

PUML1,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 1

AEC-Q101; IEC-60134

PUMF11

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

30

260

PUMF12T/R

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

PUMF11,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

30

260

PUML1/DG

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

SILICON

50 V

DUAL

R-PDSO-G6

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

PUMF12,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

30

260

PUMF12

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

30

260

PUMH14

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PEMH1

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

60

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

PUMH11/T1

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 1

AEC-Q101

PEMH7,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PUMD18/T1

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 2.1

e3

PUMH11,165

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 1

AEC-Q101

PUMH4

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

.4 W

200

150 Cel

3.5 pF

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PUMH9,135

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

PUMH9,165

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

PUMD12T/R

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

PUMH16,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 2.1

e3

30

260

PEMH7

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PUMH2T/R

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

PUMH30

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PEMH24

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.02 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e3

30

260

PUMD19,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

PUMH7T/R

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR

e3

PEMD14

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

PUMD48

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 21.36

e3

30

260

PUMD6T/R

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.4 W

200

150 Cel

3.5 pF

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR

e3

PUMD9/T2

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

PUMD9T/R

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

PEMD15

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

PUMD4,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PUMD48/T2

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 21.36

e3

PUMH9

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

PUMH10T/R

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21

e3

PEMH19

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

PUMD13

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

30

260

PEMH16,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 2.1

e3

30

260

PUMH24/T1

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.02 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e3

PUMD15/T1

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

PUMD18/T2

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 2.1

e3

PUMD15

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

PUMH9T/R

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395