.05 A Small Signal Bipolar Junction Transistors (BJT) 1,601

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

933762660112

NXP Semiconductors

NPN

SINGLE

NO

70 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

SILICON

350 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

M38510/10802BCX

NXP Semiconductors

NPN

COMPLEX

NO

300 MHz

.05 A

CERAMIC, GLASS-SEALED

SWITCHING

THROUGH-HOLE

RECTANGULAR

4

14

IN-LINE

60

SILICON

15 V

150 ns

280 ns

TIN/NICKEL PALLADIUM GOLD

DUAL

R-GDIP-T14

Not Qualified

e3/e4

MIL-M38510/108A

PMBT5088-TAPE-13

NXP Semiconductors

NPN

SINGLE

YES

200 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

150 Cel

4 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMST5089,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

400

150 Cel

4 pF

SILICON

25 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

30

260

PMBT5089

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMST5089-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

150 Cel

4 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMST5088,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

300

150 Cel

4 pF

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

30

260

PMBT5089-T

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMBT5089TRL13

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMBT5088TRL13

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMST5088-TAPE-13

NXP Semiconductors

NPN

SINGLE

YES

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

150 Cel

4 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMBT5089TRL

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMBT5088-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

200 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

150 Cel

4 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PDTA114ET-TAPE-13

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

5 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

PDTA114ET-TAPE-7

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

5 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

PDTC114ET-TAPE-7

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

3.5 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

PMBT5088TRL

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PDTC114ET-TAPE-13

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

3.5 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

PDTA114EU,135

NXP Semiconductors

PNP

YES

.2 W

.05 A

1

BIP General Purpose Small Signal

30

TIN

1

e3

30

260

PMST5088-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

150 Cel

4 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

PMST5089-TAPE-13

NXP Semiconductors

NPN

SINGLE

YES

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

150 Cel

4 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

BF720E6433

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BF723E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

250 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BF722E6327

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

250 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BFN22E6327

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

250 V

DUAL

R-PDSO-G3

Not Qualified

BF622E6433

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

250 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BF622E6327

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

250 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BF722E6433

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

250 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BF721E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BF721E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BF720E6327

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BF623E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

250 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BF623E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

250 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BF723E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

250 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BFN23E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

250 V

DUAL

R-PDSO-G3

Not Qualified

SMBT5087E6327

Infineon Technologies

PNP

SINGLE

YES

40 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BCR101F

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.25 W

.05 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR101T-E6433

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR151F

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

120 MHz

.25 W

.05 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR151T-E6327

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR151F-E6327

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR101F-E6433

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR101F-E6327

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR151L3

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

120 MHz

.25 W

.05 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR101T

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.25 W

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR151F-E6433

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR151L3E6327

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR101L3E6327

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395