1 A Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FXT555SMTC

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

150 V

SINGLE

R-PSSO-G3

Not Qualified

FXT455STOF

Diodes Incorporated

NPN

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

SILICON

140 V

SINGLE

R-PSIP-T3

Not Qualified

DPLS160-7

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

.3 W

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

2N6732Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX601

Diodes Incorporated

NPN

DARLINGTON

NO

250 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

1000

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

10

260

CECC

BC869TA

Diodes Incorporated

PNP

SINGLE

YES

60 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZTX451

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

CECC

2N6715STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX453M1TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FXT449STOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

DVR3V3W-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN DIODE

YES

100 MHz

.2 W

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

18 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

2N6716Q

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6724STZ

Diodes Incorporated

NPN

DARLINGTON

NO

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

4000

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX705STOA

Diodes Incorporated

PNP

DARLINGTON

NO

160 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

2000

SILICON

120 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

FCX493TC

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

UZTX551

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

TO-92

e3

10

260

FXT68STOE

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

85

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT453

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

FXT68SM

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

85

SILICON

20 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FXT705SM

Diodes Incorporated

PNP

DARLINGTON

YES

160 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

2000

SILICON

120 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX451M1TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

2N6715

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

2N6732K

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6728SM

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

BFS60M1TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6726

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

TIN LEAD

SINGLE

R-PSIP-W3

Not Qualified

e0

FCX495

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

150 V

Matte Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

2N6718M1TC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

FXT449STOA

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

DSS4140V-7

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

.6 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

UBSR43

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

250 ns

1000 ns

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

FXT54SM

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DSS5160U-7

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.4 W

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2N6714SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

BFS96L

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT755STOA

Diodes Incorporated

PNP

SINGLE

NO

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

150 V

SINGLE

R-PSIP-W3

Not Qualified

2N6715STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UFCX491

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

UZTX549SMTC

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FXT553STOB

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

2N6731L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

ZUMT591TC

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.5 W

1 A

PLASTIC/EPOXY

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

15

150 Cel

10 pF

SILICON

60 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

e3

260

FXT51STOE

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6714SMTC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

DCP55-13

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

2 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

FXT549STOF

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

SILICON

30 V

SINGLE

R-PSIP-T3

Not Qualified

DPLS160V-7

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

.3 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

ZXTD4591E6TC

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

150 MHz

1.7 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signals

30

150 Cel

SILICON

60 V

DUAL

R-PDSO-G6

Not Qualified

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395