1 A Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FXT453STOE

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

100 V

SINGLE

R-PSIP-T3

Not Qualified

DCP68-13

Diodes Incorporated

NPN

SINGLE

YES

330 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

20 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

FXT54STZ

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6726Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

FXT54STOE

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2DB1694-7

Diodes Incorporated

PNP

SINGLE

YES

300 MHz

.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2N6732M1TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

ZTX360STZ

Diodes Incorporated

NPN

SINGLE

NO

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

40 V

40 ns

75 ns

SINGLE

R-PSIP-W3

Not Qualified

UZTX551STOA

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT550SMTC

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

2N6724M1TC

Diodes Incorporated

NPN

DARLINGTON

YES

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

4000

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

2N6731STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

ZUMT591TA

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.5 W

1 A

PLASTIC/EPOXY

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

15

150 Cel

10 pF

SILICON

60 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

e3

260

FXT551SM

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX450STOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

UZTX576M1TA

Diodes Incorporated

PNP

SINGLE

YES

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

200 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6717L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6727STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX549

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

2N6730M1

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

FCX591ATC

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

2N6729STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2DB1132Q-13

Diodes Incorporated

PNP

SINGLE

YES

190 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

32 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

2N6730SMTC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

UBCX5316

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

UZTX755STOB

Diodes Incorporated

PNP

SINGLE

NO

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

150 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DCX69-25-13

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

20 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

2N6718SMTA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX551SMTC

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6727STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UZXTD09N50DE6TA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

20

150 Cel

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

BFS96STOB

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6717STOA

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6729SMTA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

FXT550

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

DCP56-16-13

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

80 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

FXT603STOF

Diodes Incorporated

NPN

DARLINGTON

NO

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

2000

SILICON

80 V

SINGLE

R-PSIP-T3

Not Qualified

2N6714K

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

2N6729K

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

FXT555STZ

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

150 V

SINGLE

R-PSIP-W3

Not Qualified

DVR2V5W-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN DIODE

YES

100 MHz

.2 W

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

18 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

2N6732SMTC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX550STOB

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6724L

Diodes Incorporated

NPN

DARLINGTON

NO

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

4000

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UFCX591A

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

FXT555

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

SILICON

150 V

BOTTOM

O-PBCY-T3

Not Qualified

2N6729M1TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

BSR42TA

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

80 V

250 ns

1000 ns

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395