3 A Small Signal Bipolar Junction Transistors (BJT) 837

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FCX1051A

Diodes Incorporated

NPN

SINGLE

YES

155 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

DXTN07025DBFG-7

Diodes Incorporated

NPN

SINGLE

YES

240 MHz

3.1 W

3 A

PLASTIC/EPOXY

SWITCHING

.4 V

FLAT

SQUARE

1

5

SMALL OUTLINE

15

175 Cel

50 pF

SILICON

25 V

-55 Cel

DUAL

S-PDSO-F5

COLLECTOR

2DA1797Q-13

Diodes Incorporated

PNP

SINGLE

YES

160 MHz

.9 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

82

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

DXTN07060BFG-7

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

3.1 W

3 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

5

SMALL OUTLINE

40

175 Cel

30 pF

SILICON

60 V

45 ns

-55 Cel

800 ns

MATTE TIN

DUAL

R-PDSO-F5

1

COLLECTOR

e3

260

UZXT3M322TC

Diodes Incorporated

PNP

SINGLE

YES

190 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

5

FLATPACK

12

150 Cel

SILICON

40 V

QUAD

R-PQFP-F5

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DZT751-13

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

ZXT11N15DFTC

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

.806 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

15 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZXT12N50DXTA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

132 MHz

1.25 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

50 V

MATTE TIN

DUAL

S-PDSO-G8

1

Not Qualified

MO-187AA

e3

260

ZTX1151ASTZ

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

.24 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

100

200 Cel

40 pF

SILICON

40 V

-55 Cel

SINGLE

R-PSIP-W3

UFCX1147A

Diodes Incorporated

PNP

SINGLE

YES

115 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

FCX688BTA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

UZTX789ASTOA

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FCX1149A

Diodes Incorporated

PNP

SINGLE

YES

135 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

115

150 Cel

SILICON

25 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

DPLS315E-13

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

15 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

FCX619TA

Diodes Incorporated

NPN

SINGLE

YES

165 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

UZTX1056ASTOB

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

30

200 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FCX688BTC

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

UZTX688BSTOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX1151A

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

UZTX788A

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

80

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

DNLS350Y-13

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

ZTX1055ASTOE

Diodes Incorporated

NPN

SINGLE

NO

130 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

SILICON

120 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZXTD3M832TA

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

190 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

10

FLATPACK

12

SILICON

40 V

MATTE TIN

QUAD

R-PQFP-F10

1

COLLECTOR

Not Qualified

e3

260

FCX1151A

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

40 V

Matte Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

UZXTD3M832TC

Diodes Incorporated

PNP

SINGLE

YES

190 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

10

FLATPACK

12

150 Cel

SILICON

40 V

QUAD

R-PQFP-F10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DXTP07060BFG-7

Diodes Incorporated

PNP

SINGLE

YES

140 MHz

3.1 W

3 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

SQUARE

1

5

SMALL OUTLINE

40

175 Cel

30 pF

SILICON

60 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-F5

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

UZTX788B

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

UZTX688B

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

UZTX1053ASTOB

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

200 Cel

SILICON

75 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2DB1424R-13

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

20 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

ZTX1053ASTOF

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

200 Cel

SILICON

75 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZXT12N50DXTA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

132 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

50

150 Cel

SILICON

50 V

DUAL

S-PDSO-G8

Not Qualified

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

ZX3CD3S1M832TA

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

190 MHz

3 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

10

FLATPACK

Other Transistors

12

150 Cel

SILICON

40 V

MATTE TIN

QUAD

R-PQFP-F10

1

COLLECTOR

Not Qualified

e3

260

UFCX688B

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

DXT751Q-13

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZXT11N15DFTA

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

.806 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

15 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

DPLS325E-13

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

25 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

UFCX1051A

Diodes Incorporated

NPN

SINGLE

YES

155 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

ZTX1055ASTZ

Diodes Incorporated

NPN

SINGLE

NO

130 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

SILICON

120 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FCX617TA

Diodes Incorporated

NPN

SINGLE

YES

120 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

15 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

DPLS350Y-13R

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 W

3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZXTD3M832TC

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

190 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

10

FLATPACK

12

SILICON

40 V

QUAD

R-PQFP-F10

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXT13P40DE6QTA

Diodes Incorporated

PNP

SINGLE

YES

115 MHz

1.7 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DXTN07045DFG-7

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

3.1 W

3 A

PLASTIC/EPOXY

SWITCHING

.3 V

FLAT

SQUARE

1

5

SMALL OUTLINE

50

175 Cel

16 pF

SILICON

45 V

-55 Cel

MATTE TIN

DUAL

S-PDSO-F5

1

COLLECTOR

e3

260

2DC4672-13

Diodes Incorporated

NPN

SINGLE

YES

180 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

45

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

ZTX1053ASTOE

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

200 Cel

SILICON

75 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX789ASTOB

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX1055ASTOB

Diodes Incorporated

NPN

SINGLE

NO

130 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

SILICON

120 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395