3 A Small Signal Bipolar Junction Transistors (BJT) 837

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BDS61B-T

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

100 V

2000 ns

8000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

BDS204

NXP Semiconductors

PNP

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

60 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS948

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS936-T

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

60 V

600 ns

2400 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS78-T

NXP Semiconductors

PNP

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

80 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS202

NXP Semiconductors

PNP

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

45 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934055946115

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

200

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BDS955

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

SILICON

120 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934055948147

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

BDS645

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

60 V

2000 ns

10000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

BDS934-T

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

45 V

600 ns

2400 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS939-T

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

100 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS945-T

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

32 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934055948120

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

BDS203-T

NXP Semiconductors

NPN

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

30

SILICON

60 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS937

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

80 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS953

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

SILICON

100 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS953-T

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

SILICON

100 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BSX62-10

NXP Semiconductors

NPN

SINGLE

NO

70 MHz

3 A

METAL

SWITCHING

.8 V

WIRE

ROUND

1

3

CYLINDRICAL

5 W

63

200 Cel

70 pF

SILICON

40 V

300 ns

1500 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

BDS201-T

NXP Semiconductors

NPN

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

45 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS61B

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

100 V

2000 ns

8000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

934055947115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

Not Qualified

e3

PHPT610035PK

NXP Semiconductors

PNP

SEPARATE, 2 ELEMENTS

YES

125 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

10

SILICON

100 V

TIN

DUAL

R-PDSO-G6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BSX63

NXP Semiconductors

NPN

SINGLE

NO

70 MHz

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

60 V

300 ns

1500 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

BDS956

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

SILICON

120 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS202-T

NXP Semiconductors

PNP

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

45 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934056526135

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

BDS938-T

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

80 V

600 ns

2400 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934056921115

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

200

SILICON

20 V

DUAL

R-PDSO-G6

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

BDS940

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

100 V

600 ns

2400 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934056921125

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

200

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-G6

Not Qualified

HIGH RELIABILITY

e3

934064273135

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

30 V

70 ns

200 ns

DUAL

R-PDSO-N3

COLLECTOR

BDS61-T

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

60 V

2000 ns

8000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

BDS939

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

SILICON

100 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS943

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

22 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934055947125

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

200

SILICON

50 V

DUAL

R-PDSO-G6

PHPT610030NPK

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

10

SILICON

100 V

TIN

DUAL

R-PDSO-G6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BDS946-T

NXP Semiconductors

PNP

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

32 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BDS951-T

NXP Semiconductors

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

SILICON

80 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

PHPT610035NK

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

25 W

3 A

PLASTIC/EPOXY

SWITCHING

.15 V

UNSPECIFIED

RECTANGULAR

2

6

SMALL OUTLINE

10

175 Cel

11 pF

SILICON

100 V

TIN

DUAL

R-PDSO-X6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BDS651

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

120 V

2000 ns

10000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

934056901126

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

SILICON

50 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BDS203

NXP Semiconductors

NPN

SINGLE

YES

7 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

30

SILICON

60 V

1000 ns

3000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

934055946125

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

200

SILICON

50 V

DUAL

R-PDSO-G6

934058036115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

30 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

BDS652-T

NXP Semiconductors

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

120 V

2000 ns

10000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

BDS61A

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

1000

SILICON

80 V

2000 ns

8000 ns

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

934057107135

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395