3 A Small Signal Bipolar Junction Transistors (BJT) 837

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UZTX788BSTOA

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DXT690BP5-13

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

3.2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

ZTX1056ASTOA

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

30

200 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

ZXT12P12DXTC

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

85 MHz

1.25 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

12 V

MATTE TIN

DUAL

S-PDSO-G8

1

Not Qualified

MO-187AA

e3

260

UZTX1056A

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

30

200 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

DXT651Q-13

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

UFCX619

Diodes Incorporated

NPN

SINGLE

YES

165 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

170 ns

750 ns

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

DPLS350E-13

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

FCX688B

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1.5 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

UZXT12N50DXTC

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

132 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

50

150 Cel

SILICON

50 V

DUAL

S-PDSO-G8

Not Qualified

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

ZTX1149ASTOB

Diodes Incorporated

PNP

SINGLE

NO

135 MHz

1 W

3 A

PLASTIC/EPOXY

.3 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

115

200 Cel

50 pF

SILICON

25 V

-55 Cel

SINGLE

R-PSIP-W3

FCX619-13R

Diodes Incorporated

NPN

SINGLE

YES

165 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

UZTX1055A

Diodes Incorporated

NPN

SINGLE

NO

130 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

SILICON

120 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

ZTX1055A

Diodes Incorporated

NPN

SINGLE

NO

130 MHz

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

50

200 Cel

SILICON

120 V

MATTE TIN

SINGLE

R-PSIP-T3

1

Not Qualified

e3

UZTX788BSTOB

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZXT3M322TA

Diodes Incorporated

PNP

SINGLE

YES

190 MHz

3 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

SQUARE

1

3

SMALL OUTLINE

Other Transistors

12

150 Cel

SILICON

40 V

MATTE TIN

DUAL

S-PDSO-F3

1

COLLECTOR

Not Qualified

e3

260

DPLS350YTC

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

DXT790AP5-13

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

3.2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

ZX3CD3S1M832TC

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

190 MHz

3 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

10

FLATPACK

Other Transistors

12

150 Cel

SILICON

40 V

MATTE TIN

QUAD

R-PQFP-F10

1

COLLECTOR

Not Qualified

e3

260

DNLS350E-13

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

DXTP07025BFG-7

Diodes Incorporated

PNP

SINGLE

YES

160 MHz

3.1 W

3 A

PLASTIC/EPOXY

SWITCHING

.4 V

FLAT

SQUARE

1

5

SMALL OUTLINE

40

175 Cel

100 pF

SILICON

25 V

-55 Cel

MATTE TIN

DUAL

S-PDSO-F5

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

FCX619QTA

Diodes Incorporated

NPN

SINGLE

YES

165 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZTX1151ASTOB

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

.24 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

100

200 Cel

40 pF

SILICON

40 V

-55 Cel

SINGLE

R-PSIP-W3

UZTX1053A

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

75 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

UZTX788ASTOA

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

80

200 Cel

SILICON

15 V

40 ns

500 ns

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZXT3M322TC

Diodes Incorporated

PNP

SINGLE

YES

190 MHz

3 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

SQUARE

1

3

SMALL OUTLINE

Other Transistors

12

150 Cel

SILICON

40 V

MATTE TIN

DUAL

S-PDSO-F3

1

COLLECTOR

Not Qualified

e3

260

UZTX1055ASTOA

Diodes Incorporated

NPN

SINGLE

NO

130 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

SILICON

120 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX1056ASTOA

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

30

200 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX1056ASTZ

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

30

200 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DPLS350YTA

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

AEC-Q101

ZXTD720MCTA

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

190 MHz

3 W

3 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

8

SMALL OUTLINE

Other Transistors

12

150 Cel

SILICON

40 V

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N8

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e4

30

260

UZXT11N15DFTA

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

15 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

FCX717

Diodes Incorporated

PNP

SINGLE

YES

110 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

45

150 Cel

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

FCX617TC

Diodes Incorporated

NPN

SINGLE

YES

120 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

15 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

UZTX688BSTOA

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

15 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UFCX1053A

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

75 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

UFCX1151A

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

UZTX1149A

Diodes Incorporated

PNP

SINGLE

NO

135 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

115

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

UZTX689BSTOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZXT11N15DFTC

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

15 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

ZTX1056A

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

1 W

3 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

Other Transistors

30

200 Cel

SILICON

160 V

MATTE TIN

SINGLE

R-PSIP-W3

1

Not Qualified

e3

260

ZTX1149A

Diodes Incorporated

PNP

SINGLE

NO

135 MHz

1 W

3 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

Other Transistors

115

200 Cel

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

ZTX1053ASTOB

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

200 Cel

SILICON

75 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZXT12P12DXTA

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

85 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

20

150 Cel

SILICON

12 V

DUAL

S-PDSO-G8

Not Qualified

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

ZTX1056ASTOB

Diodes Incorporated

NPN

SINGLE

NO

120 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

30

200 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX789A

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

ZTX1151ASTOA

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

.24 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

100

200 Cel

40 pF

SILICON

40 V

-55 Cel

SINGLE

R-PSIP-W3

DMJT9435-13

Diodes Incorporated

PNP

SINGLE

YES

160 MHz

3 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395