Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated |
PNP |
SINGLE |
NO |
100 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
150 |
SILICON |
15 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
150 MHz |
3.2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
60 |
150 Cel |
SILICON |
45 V |
MATTE TIN |
DUAL |
R-PDSO-F3 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
120 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
30 |
200 Cel |
SILICON |
160 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
85 MHz |
1.25 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
SQUARE |
2 |
8 |
SMALL OUTLINE |
Other Transistors |
20 |
150 Cel |
SILICON |
12 V |
MATTE TIN |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
MO-187AA |
e3 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
120 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
30 |
200 Cel |
SILICON |
160 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
200 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
40 |
SILICON |
60 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
COLLECTOR |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
165 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
150 Cel |
SILICON |
50 V |
170 ns |
750 ns |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
100 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
50 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
150 MHz |
1.5 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
12 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
Diodes Incorporated |
NPN |
SEPARATE, 2 ELEMENTS |
YES |
132 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
SQUARE |
2 |
8 |
SMALL OUTLINE |
50 |
150 Cel |
SILICON |
50 V |
DUAL |
S-PDSO-G8 |
Not Qualified |
MO-187AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Diodes Incorporated |
PNP |
SINGLE |
NO |
135 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
.3 V |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
1 W |
115 |
200 Cel |
50 pF |
SILICON |
25 V |
-55 Cel |
SINGLE |
R-PSIP-W3 |
||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
165 MHz |
2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
50 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
130 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
50 |
200 Cel |
SILICON |
120 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
10 |
260 |
||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
130 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
50 |
200 Cel |
SILICON |
120 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||
Diodes Incorporated |
PNP |
SINGLE |
NO |
100 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
150 |
SILICON |
15 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
190 MHz |
3 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
SQUARE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
12 |
150 Cel |
SILICON |
40 V |
MATTE TIN |
DUAL |
S-PDSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
100 MHz |
3 A |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
80 |
SILICON |
50 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
100 MHz |
3.2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
80 |
150 Cel |
SILICON |
40 V |
MATTE TIN |
DUAL |
R-PDSO-F3 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE WITH BUILT-IN DIODE |
YES |
190 MHz |
3 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
10 |
FLATPACK |
Other Transistors |
12 |
150 Cel |
SILICON |
40 V |
MATTE TIN |
QUAD |
R-PQFP-F10 |
1 |
COLLECTOR |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
100 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
50 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
160 MHz |
3.1 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
.4 V |
FLAT |
SQUARE |
1 |
5 |
SMALL OUTLINE |
40 |
175 Cel |
100 pF |
SILICON |
25 V |
-55 Cel |
MATTE TIN |
DUAL |
S-PDSO-F5 |
1 |
COLLECTOR |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
165 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
SILICON |
50 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||
Diodes Incorporated |
PNP |
SINGLE |
NO |
145 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
.24 V |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
1 W |
100 |
200 Cel |
40 pF |
SILICON |
40 V |
-55 Cel |
SINGLE |
R-PSIP-W3 |
||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
140 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
100 |
SILICON |
75 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
Diodes Incorporated |
PNP |
SINGLE |
NO |
150 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
80 |
200 Cel |
SILICON |
15 V |
40 ns |
500 ns |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
190 MHz |
3 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
SQUARE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
12 |
150 Cel |
SILICON |
40 V |
MATTE TIN |
DUAL |
S-PDSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
130 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
50 |
200 Cel |
SILICON |
120 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
120 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
30 |
200 Cel |
SILICON |
160 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
120 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
30 |
200 Cel |
SILICON |
160 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
100 MHz |
3 A |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
80 |
SILICON |
50 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
HIGH RELIABILITY |
e3 |
AEC-Q101 |
|||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
190 MHz |
3 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
2 |
8 |
SMALL OUTLINE |
Other Transistors |
12 |
150 Cel |
SILICON |
40 V |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-N8 |
1 |
COLLECTOR |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
|||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
145 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
150 |
150 Cel |
SILICON |
15 V |
Matte Tin (Sn) |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
40 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
110 MHz |
2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
45 |
150 Cel |
SILICON |
12 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
120 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
150 |
150 Cel |
SILICON |
15 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
150 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
100 |
SILICON |
15 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
140 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
40 |
150 Cel |
SILICON |
75 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
145 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
SILICON |
40 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
40 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
NO |
135 MHz |
3 A |
PLASTIC/EPOXY |
AMPLIFIER |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
115 |
SILICON |
25 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
150 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
150 |
SILICON |
20 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
145 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
150 |
150 Cel |
SILICON |
15 V |
Matte Tin (Sn) |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
40 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
120 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Other Transistors |
30 |
200 Cel |
SILICON |
160 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
1 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
NO |
135 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
AMPLIFIER |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Other Transistors |
115 |
200 Cel |
SILICON |
25 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
140 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
100 |
200 Cel |
SILICON |
75 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Diodes Incorporated |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
85 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
SQUARE |
2 |
8 |
SMALL OUTLINE |
20 |
150 Cel |
SILICON |
12 V |
DUAL |
S-PDSO-G8 |
Not Qualified |
MO-187AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
120 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
30 |
200 Cel |
SILICON |
160 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
NO |
100 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
100 |
SILICON |
25 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
Diodes Incorporated |
PNP |
SINGLE |
NO |
145 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
.24 V |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
1 W |
100 |
200 Cel |
40 pF |
SILICON |
40 V |
-55 Cel |
SINGLE |
R-PSIP-W3 |
||||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
160 MHz |
3 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
90 |
150 Cel |
SILICON |
30 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.
Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395