3 A Small Signal Bipolar Junction Transistors (BJT) 837

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N1040

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

100 Cel

GERMANIUM

50 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

TI156

Texas Instruments

PNP

SINGLE

NO

.22 MHz

1 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

100 Cel

GERMANIUM

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N2554

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

20

100 Cel

GERMANIUM

50 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N2664

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

15

100 Cel

GERMANIUM

50 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N2670

Texas Instruments

PNP

SINGLE

NO

.3 MHz

15 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

25

100 Cel

GERMANIUM

50 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N1039

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

100 Cel

GERMANIUM

40 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2555

Texas Instruments

PNP

SINGLE

NO

2200 MHz

20 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

20

100 Cel

GERMANIUM

60 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N2659

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

100 Cel

GERMANIUM

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2660

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

100 Cel

GERMANIUM

40 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2665

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

100 Cel

GERMANIUM

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N3719

Texas Instruments

PNP

SINGLE

NO

60 MHz

1 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

200 Cel

SILICON

40 V

100 ns

400 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N3720

Texas Instruments

PNP

SINGLE

NO

60 MHz

1 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

200 Cel

SILICON

60 V

100 ns

400 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

KSD794A

Onsemi

NPN

SINGLE

NO

60 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1 W

150 Cel

40 pF

SILICON

60 V

60 ns

SINGLE

R-PSFM-T3

TO-126

KSD794A-R

Onsemi

NPN

SINGLE

NO

60 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1 W

150 Cel

40 pF

SILICON

60 V

60 ns

SINGLE

R-PSFM-T3

TO-126

KSD794A-Y

Onsemi

NPN

SINGLE

NO

60 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1 W

150 Cel

40 pF

SILICON

60 V

160 ns

SINGLE

R-PSFM-T3

TO-126

FJC1308P

Onsemi

PNP

SINGLE

YES

.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

.45 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

30 V

SINGLE

R-PSSO-F3

NSB9435T1G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

BIP General Purpose Small Signal

90

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

TO-261AA

e3

30

260

FSB749

Onsemi

PNP

SINGLE

YES

100 MHz

.5 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

25 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

CPH3122-TL-E

Onsemi

PNP

SINGLE

YES

.9 W

3 A

1

Other Transistors

200

150 Cel

TIN BISMUTH

1

e6

30

260

NSV40300CTWG

Onsemi

PNP

SINGLE

YES

160 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

150 Cel

40 pF

SILICON

40 V

-55 Cel

MATTE TIN

SINGLE

R-PSSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101

FSB749D87Z

Onsemi

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

MMJT9435T1

Onsemi

PNP

SINGLE

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e0

30

235

NSB9435T1

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

BIP General Purpose Small Signal

90

SILICON

30 V

TIN LEAD

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

BUILT IN BIAS RESISTOR

TO-261AA

e0

MMJT9435T1G

Onsemi

PNP

SINGLE

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

NSV40301MDR2G

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.783 W

3 A

PLASTIC/EPOXY

SWITCHING

.115 V

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

180

150 Cel

50 pF

SILICON

40 V

200 ns

-55 Cel

890 ns

MATTE TIN

DUAL

R-PDSO-G8

1

e3

30

260

FSB649

Onsemi

NPN

SINGLE

YES

150 MHz

.5 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

25 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FJC1963Q

Onsemi

NPN

SINGLE

YES

3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

30 V

SINGLE

R-PSSO-F3

MMJT9435T3

Onsemi

PNP

SINGLE

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e0

30

235

CPH3121-TL-E

Onsemi

PNP

SINGLE

YES

.9 W

3 A

1

Other Transistors

200

150 Cel

TIN BISMUTH

1

e6

30

260

2SB985T

Onsemi

PNP

SINGLE

NO

150 MHz

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

SILICON

50 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

BOTTOM

O-PBCY-T3

Not Qualified

CPH5504-TL-E

Onsemi

NPN

COMMON EMITTER, 2 ELEMENTS

YES

380 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

5

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G5

FJC1308

Onsemi

PNP

SINGLE

YES

.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

.45 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

30 V

SINGLE

R-PSSO-F3

KSD794

Onsemi

NPN

SINGLE

NO

60 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1 W

150 Cel

40 pF

SILICON

45 V

60 ns

SINGLE

R-PSFM-T3

TO-126

KSD794O

Onsemi

NPN

SINGLE

NO

60 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1 W

150 Cel

40 pF

SILICON

45 V

100 ns

SINGLE

R-PSFM-T3

TO-126

KSD794A-O

Onsemi

NPN

SINGLE

NO

60 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1 W

150 Cel

40 pF

SILICON

60 V

100 ns

SINGLE

R-PSFM-T3

TO-126

FSB649D87Z

Onsemi

NPN

SINGLE

YES

150 MHz

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

NSV40300MDR2G

Onsemi

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.783 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G8

1

e3

30

260

FJC1963S

Onsemi

NPN

SINGLE

YES

3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

280

SILICON

30 V

SINGLE

R-PSSO-F3

CPH3123

Onsemi

PNP

SINGLE

YES

.9 W

3 A

1

Other Transistors

200

150 Cel

MCH3205-TL-E

Onsemi

NPN

SINGLE

YES

380 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

50 V

DUAL

R-PDSO-F3

NZT560

Onsemi

NPN

SINGLE

YES

75 MHz

2 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

CPH5524

Onsemi

NPN AND PNP

SINGLE

YES

1.2 W

3 A

1

BIP General Purpose Small Signal

200

150 Cel

FJC1963

Onsemi

NPN

SINGLE

YES

3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

30 V

SINGLE

R-PSSO-F3

CPH3223-TL-E

Onsemi

NPN

SINGLE

YES

380 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

50 V

DUAL

R-PDSO-G3

TO-236

MMJT9435T3G

Onsemi

PNP

SINGLE

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

CPH3109-TL-E

Onsemi

PNP

SINGLE

YES

380 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

DUAL

R-PDSO-G3

TO-236

MMJT9435

Onsemi

PNP

SINGLE

YES

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

125

150 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

e0

FJC1308R

Onsemi

PNP

SINGLE

YES

.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

.45 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

180

150 Cel

SILICON

30 V

SINGLE

R-PSSO-F3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395