3 A Small Signal Bipolar Junction Transistors (BJT) 837

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SB906-Y(TE16L1,NQ)

Toshiba

PNP

SINGLE

YES

9 MHz

20 W

3 A

PLASTIC/EPOXY

AMPLIFIER

1.7 V

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

1 W

100

150 Cel

SILICON

60 V

SINGLE

R-PSSO-G2

COLLECTOR

2SB906-Y(TE16L1,NQ

Toshiba

PNP

SINGLE

YES

9 MHz

20 W

3 A

PLASTIC/EPOXY

AMPLIFIER

1.7 V

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

1 W

100

150 Cel

SILICON

60 V

SINGLE

R-PSSO-G2

COLLECTOR

BDP949-E6327

Infineon Technologies

NPN

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

KSB772YSTSTU

Fairchild Semiconductor

PNP

SINGLE

NO

80 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

160

150 Cel

SILICON

30 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-126

e3

PBSS4350Z

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

1.35 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS4350Z/ZLF

Nexperia

NPN

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

200

SILICON

50 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

PBSS4350X,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

1.6 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

50 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

2DA1797-13

Diodes Incorporated

PNP

SINGLE

YES

160 MHz

.9 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

82

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

PBSS4360PASX

Nexperia

NPN

SINGLE

YES

160 MHz

3 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

75

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS5350X,135

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1.6 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

50 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

2SA1797T100/Q

ROHM

PNP

SINGLE

YES

200 MHz

2 W

3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e2

10

260

2SAR533P5T100

ROHM

PNP

SINGLE

YES

300 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

.4 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

180

150 Cel

24 pF

SILICON

50 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

10

260

2SB1184TLQ

ROHM

PNP

SINGLE

YES

70 MHz

15 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Copper (Sn98Cu2)

SINGLE

R-PSSO-G2

1

Not Qualified

e2

10

260

2SCR542F3TR

ROHM

NPN

SINGLE

YES

250 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

NO LEAD

SQUARE

1

3

SMALL OUTLINE

200

150 Cel

SILICON

30 V

TIN

DUAL

S-PDSO-N3

COLLECTOR

e3

FCX1053A

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

75 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

FCX789ATA

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 W

3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

25 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

QS5Y2FSTR

ROHM

NPN AND PNP

COMMON EMITTER, 2 ELEMENTS

YES

320 MHz

1.25 W

3 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

2

5

SMALL OUTLINE

.5 W

180

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G5

e2

2SA1761

Toshiba

PNP

SINGLE

NO

100 MHz

.9 W

3 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SC4541

Toshiba

NPN

SINGLE

YES

100 MHz

.5 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SC4672T100/Q

ROHM

NPN

SINGLE

YES

210 MHz

.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

.35 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e2

10

260

2SC5824T100R

ROHM

NPN

SINGLE

YES

200 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

60 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e2

10

260

2SCR543RTL

ROHM

NPN

SINGLE

YES

300 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SD1760TLQ

ROHM

NPN

SINGLE

YES

90 MHz

15 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-G2

Not Qualified

e2

10

260

2SD2318TLU

ROHM

NPN

SINGLE

YES

50 MHz

15 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

560

150 Cel

SILICON

60 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-G2

Not Qualified

e2

10

260

2SD2670TL

ROHM

NPN

SINGLE

YES

280 MHz

.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

12 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SAR533PT100

ROHM

PNP

SINGLE

YES

300 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

50 V

TIN COPPER

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e2

10

260

CPH3209-TL-E

Onsemi

NPN

SINGLE

YES

450 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

DUAL

R-PDSO-G3

TO-236

DNLS320E-13

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

NSS40302PDR2G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.783 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

BIP General Purpose Small Signal

180

150 Cel

SILICON

40 V

200 ns

890 ns

MATTE TIN

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

PHPT610030PKX

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

125 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

10

SILICON

100 V

TIN

DUAL

R-PDSO-G6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

2N2553

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

20

100 Cel

GERMANIUM

40 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N1041

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

100 Cel

GERMANIUM

60 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2669

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

25

100 Cel

GERMANIUM

40 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N3420

Texas Instruments

NPN

SINGLE

NO

40 MHz

1 W

3 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

200 Cel

SILICON

60 V

300 ns

1200 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

TI156L

Texas Instruments

PNP

SINGLE

NO

.22 MHz

1 W

3 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

3

FLANGE MOUNT

Other Transistors

15

100 Cel

GERMANIUM

30 V

UPPER

O-MUFM-D3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N3419

Texas Instruments

NPN

SINGLE

NO

40 MHz

1 W

3 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

10

200 Cel

SILICON

80 V

300 ns

1200 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2663

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

15

100 Cel

GERMANIUM

40 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N3421

Texas Instruments

NPN

SINGLE

NO

40 MHz

1 W

3 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

200 Cel

SILICON

80 V

300 ns

1200 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

TIP501

Texas Instruments

NPN

SINGLE

NO

60 MHz

1 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

175 Cel

SILICON

40 V

100 ns

400 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

NOT SPECIFIED

NOT SPECIFIED

2N1038

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

100 Cel

GERMANIUM

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2552

Texas Instruments

PNP

SINGLE

NO

20 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

20

100 Cel

GERMANIUM

30 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N2662

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

15

100 Cel

GERMANIUM

30 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N2661

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

100 Cel

GERMANIUM

50 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2667

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

100 Cel

GERMANIUM

50 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2668

Texas Instruments

PNP

SINGLE

NO

.3 MHz

15 W

3 A

METAL

SWITCHING

WIRE

UNSPECIFIED

1

3

POST/STUD MOUNT

Other Transistors

25

100 Cel

GERMANIUM

30 V

UPPER

X-MUPM-W3

COLLECTOR

Not Qualified

2N3418

Texas Instruments

NPN

SINGLE

NO

40 MHz

1 W

3 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

10

200 Cel

SILICON

60 V

300 ns

1200 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

TIP502

Texas Instruments

NPN

SINGLE

NO

60 MHz

1 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

175 Cel

SILICON

60 V

100 ns

400 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

NOT SPECIFIED

NOT SPECIFIED

2N2666

Texas Instruments

PNP

SINGLE

NO

15 W

3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

100 Cel

GERMANIUM

40 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395