.55 W Small Signal Bipolar Junction Transistors (BJT) 11

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MCH6545

Onsemi

NPN AND PNP

YES

.55 W

.5 A

BIP General Purpose Small Signal

300

150 Cel

MCH6536

Onsemi

NPN AND PNP

YES

.55 W

.5 A

BIP General Purpose Small Signal

300

150 Cel

MCH6542-TL-E

Onsemi

NPN AND PNP

YES

.55 W

.3 A

BIP General Purpose Small Signal

300

150 Cel

Tin/Bismuth (Sn/Bi)

1

e6

MCH6541

Onsemi

NPN AND PNP

SINGLE

YES

.55 W

.7 A

1

BIP General Purpose Small Signal

300

150 Cel

MCH6542

Onsemi

NPN AND PNP

YES

.55 W

.3 A

BIP General Purpose Small Signal

300

150 Cel

MCH6535

Onsemi

NPN AND PNP

YES

.55 W

1 A

BIP General Purpose Small Signal

300

150 Cel

PBSS4350SPN,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

.55 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

SILICON

50 V

104 ns

520 ns

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

PBSS4350SPN

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

.55 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

SILICON

50 V

104 ns

520 ns

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

2SC5765

Toshiba

NPN

SINGLE

NO

.55 W

5 A

UNSPECIFIED

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

170

150 Cel

SILICON

10 V

TIN LEAD

BOTTOM

O-XBCY-T3

Not Qualified

e0

2SC5720

Toshiba

NPN

SINGLE

NO

.55 W

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

240

150 Cel

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

UPA80C-A

Renesas Electronics

NPN AND PNP

NO

.55 W

14

BIP General Purpose Small Signals

100

SILICON

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395