.57 W Small Signal Bipolar Junction Transistors (BJT) 21

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBRN123YT,215

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

300

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.55

TO-236AB

e3

30

260

PBRP123ETT/R

NXP Semiconductors

PNP

YES

.57 W

1

BIP General Purpose Small Signal

70

PBRP123ET,215

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

250

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-263AB

e3

30

260

PBRP113ZT

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

190

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 10

TO-236AB

e3

30

260

PBRP113ET

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

40

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

e3

30

260

PBRP123YT

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

190

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.55

TO-236AB

e3

30

260

PBRP113ZTT/R

NXP Semiconductors

PNP

YES

.57 W

.6 A

1

BIP General Purpose Small Signal

190

SILICON

PBRP123YTT/R

NXP Semiconductors

PNP

YES

.57 W

.6 A

1

BIP General Purpose Small Signal

190

SILICON

PBRP123YT,215

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

190

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.55

TO-236AB

e3

30

260

PBRP113ZT,215

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

190

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 10

TO-236AB

e3

30

260

PBRP123ET

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

250

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-263AB

e3

30

260

PBRP113ET,215

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

40

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

e3

30

260

PBRN123YK

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

300

SILICON

40 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.55

TO-236AB

PBRN123ET,215

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

340

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

e3

30

260

PBRN113ET,215

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

270

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

e3

30

260

PBRN113ET

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

270

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

e3

30

260

PBRN113ZT,215

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

300

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

TO-236AB

e3

30

260

PBRN113EK

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

270

SILICON

40 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

PBRN123YT

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

300

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.55

TO-236AB

e3

30

260

PBRN123ET

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

340

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

e3

30

260

PBRN123EK

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.57 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

340

150 Cel

SILICON

40 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

TO-236AB

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395