20 W Small Signal Bipolar Junction Transistors (BJT) 158

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SD669B

Renesas Electronics

NPN

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

120 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD669D

Renesas Electronics

NPN

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

160

150 Cel

SILICON

120 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SB649AB

Renesas Electronics

PNP

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

160 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD669AC

Renesas Electronics

NPN

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

160 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SB649

Renesas Electronics

PNP

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

30

150 Cel

SILICON

120 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD669C

Renesas Electronics

NPN

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

120 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SB649C

Renesas Electronics

PNP

SINGLE

NO

140 MHz

20 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

120 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SA1412-Z

Renesas Electronics

PNP

SINGLE

YES

40 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1412-Z-AZ

Renesas Electronics

PNP

SINGLE

YES

40 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

400 V

500 ns

2700 ns

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

10

260

KSB906

Samsung

PNP

SINGLE

NO

9 MHz

20 W

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

20

150 Cel

SILICON

60 V

SINGLE

R-PSIP-T3

Not Qualified

KSC3074

Samsung

NPN

SINGLE

NO

60 MHz

20 W

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

70

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

Not Qualified

KSC3233

Samsung

NPN

SINGLE

NO

20 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

8

150 Cel

SILICON

400 V

SINGLE

R-PSIP-T3

Not Qualified

KSA1244

Samsung

PNP

SINGLE

NO

20 W

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

70

SILICON

SINGLE

R-PSIP-T3

Not Qualified

KSD1221

Samsung

NPN

SINGLE

NO

3 MHz

20 W

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

60

150 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395