20 W Small Signal Bipolar Junction Transistors (BJT) 158

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SB1204S-E	Onsemi	PNP	SINGLE	NO		20 W	8 A						1			Other Transistors		140	150 Cel				TIN BISMUTH						e6
2SD1816TTP-FA	Onsemi	NPN	SINGLE	YES		20 W	4 A						1			Other Transistors		200	150 Cel
2SD1816S-H	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR	TO-251	e6
2SD1203T-H	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE		1 W	200	150 Cel	60 pF	SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR	TO-251
2SB1203	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		35	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SB1216STP	Onsemi	PNP	SINGLE	NO		20 W	4 A						1			Other Transistors		140	150 Cel
2SB1216STP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A						1			Other Transistors		140	150 Cel
2SD1816S-E	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR	TO-251	e6
2SB1204T-TL-E	Onsemi	PNP	SINGLE	YES		20 W	8 A						1			Other Transistors		200	150 Cel				TIN BISMUTH			1			e6	30	260
2SD1815S-TL-E	Onsemi	NPN	SINGLE	YES		20 W	3 A						1			Other Transistors		140	150 Cel				Tin/Bismuth (Sn/Bi)			1			e6	30	260
2SD1816QTP	Onsemi	NPN	SINGLE	NO		20 W	4 A						1			Other Transistors		70	150 Cel
2SB1215T-TL-H	Onsemi	PNP	SINGLE	YES		20 W	3 A						1			Other Transistors		200	150 Cel				TIN BISMUTH			1			e6
2SB1215S-TL-H	Onsemi	PNP	SINGLE	YES		20 W	3 A						1			Other Transistors		140	150 Cel				TIN BISMUTH			1			e6
2SB1204S-TL-E	Onsemi	PNP	SINGLE	YES		20 W	8 A						1			Other Transistors		140	150 Cel				TIN BISMUTH			1			e6	30	260
2SB1216S-TL-E	Onsemi	PNP	SINGLE	YES	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		140	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e6	30	260
2SD1815T-TL-H	Onsemi	NPN	SINGLE	YES		20 W	3 A						1			Other Transistors		200	150 Cel				TIN BISMUTH			1			e6	30	260
2SB1216RTP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A						1			Other Transistors		100	150 Cel
2SB1216TTP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A						1			Other Transistors		200	150 Cel
2SB1803S-H	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE		1 W	140	150 Cel	40 pF	SILICON	50 V		SINGLE	R-PSIP-T3			TO-251
2SD1816T-TL-E	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	100 V	Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e6	30	260
2SB1204T	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		200	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SB1216T-E	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		200	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR	TO-251	e6
2SD1804T	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		200	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3	1	COLLECTOR
2SB1203R	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		100	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SB1216S-H	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR	TO-251	e6
2SB1216S	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	100 V		SINGLE	R-PSIP-T3		COLLECTOR
2SB1216TTP	Onsemi	PNP	SINGLE	NO		20 W	4 A						1			Other Transistors		200	150 Cel
2SB1216QTP	Onsemi	PNP	SINGLE	NO		20 W	4 A						1			Other Transistors		70	150 Cel
2SB1204T-E	Onsemi	PNP	SINGLE	NO		20 W	8 A						1			Other Transistors		200	150 Cel				TIN BISMUTH						e6
2SB1204S	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SB1215T-E	Onsemi	PNP	SINGLE	NO		20 W	3 A						1		IN-LINE	Other Transistors		200	150 Cel		SILICON	100 V	TIN BISMUTH						e6
2SD1816RTP	Onsemi	NPN	SINGLE	NO		20 W	4 A						1			Other Transistors		100	150 Cel
2SB1215S	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	3 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	100 V		SINGLE	R-PSIP-T3		COLLECTOR	TO-251
2SD1816T-TL-H	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	100 V	Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e6	30	260
2SD1816STP	Onsemi	NPN	SINGLE	NO		20 W	4 A						1			Other Transistors		140	150 Cel
2SD1803R	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		100	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SD1816T-E	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		200	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR	TO-251	e6
2SB1203S	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		140	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SD1816S-TL-H	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		140	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e6	30	260
2SD1203T-E	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE		1 W	200	150 Cel	60 pF	SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR	TO-251
2SD1816QTP-FA	Onsemi	NPN	SINGLE	YES		20 W	4 A						1			Other Transistors		70	150 Cel
2SD1816TTP	Onsemi	NPN	SINGLE	NO		20 W	4 A						1			Other Transistors		200	150 Cel
2SD1816S-TL-E	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		140	150 Cel		SILICON	100 V	Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e6	30	260
2SD1815S-H	Onsemi	NPN	SINGLE	NO		20 W	3 A						1			Other Transistors		140	150 Cel				TIN BISMUTH						e6
2SB1803S-TL-E	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE		1 W	140	150 Cel	40 pF	SILICON	50 V		SINGLE	R-PSSO-G2			TO-252
2SB1216S-TL-H	Onsemi	PNP	SINGLE	YES	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		140	150 Cel		SILICON	100 V	TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e6
2SD1803T	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		200	150 Cel		SILICON	50 V		SINGLE	R-PSIP-T3		COLLECTOR
2SB1215S-TL-E	Onsemi	PNP	SINGLE	YES		20 W	3 A						1			Other Transistors		140	150 Cel				Tin/Bismuth (Sn/Bi)			1			e6	30	260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395