Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA844C

Renesas Electronics

PNP

SINGLE

NO

200 MHz

.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

125 Cel

SILICON

55 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

FA4F3M

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

8

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e0

FN4F3R-T2B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KA4L4M-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA4F3M-L-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

8

SILICON

KA4F3P-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SD2030BRR

Renesas Electronics

NPN

SINGLE

NO

140 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

SILICON

160 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD468RR

Renesas Electronics

NPN

SINGLE

NO

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

85

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

GN4F4M-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GN1A4Z-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

2SB637K-E

Renesas Electronics

PNP

SINGLE

NO

200 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

400

SILICON

50 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

GA1L4Z-T2-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

KN4F3R-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GA1F4M-T2-AT

Renesas Electronics

FB1A3M-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

135

SILICON

KN4A4P-T1

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA4L3N-L

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SD655E-E

Renesas Electronics

NPN

SINGLE

NO

250 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

400

SILICON

15 V

TIN COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e2

FN4L4L-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SB831BBTR

Renesas Electronics

PNP

SINGLE

YES

350 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

85

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

GN4L3N-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SD780DW2

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

150 Cel

SILICON

60 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SB647A

Renesas Electronics

PNP

SINGLE

NO

140 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

30

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SA836TZ

Renesas Electronics

PNP

SINGLE

NO

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

160

SILICON

55 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

KA4F4Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR

e0

GA1F4M-T2-A

Renesas Electronics

2SA673ABTZ-E

Renesas Electronics

PNP

SINGLE

NO

.4 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

150 Cel

SILICON

50 V

TIN COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e2

FP1J3P-T1B-A

Renesas Electronics

PNP

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

50

SILICON

TIN BISMUTH

e6

FN4L4L-T1B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

FA4F4N-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN4A4P-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SB647ABTZ

Renesas Electronics

PNP

SINGLE

NO

140 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

HD2A3M-T1-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

FA1L4ZL62-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

FA4L4Z-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

HD1L2Q-T1-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

FN4L4M-T1B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD756E

Renesas Electronics

NPN

SINGLE

NO

350 MHz

.75 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

400

150 Cel

SILICON

120 V

BOTTOM

O-PBCY-T3

1

Not Qualified

2SD666A

Renesas Electronics

NO

PLASTIC/EPOXY

WIRE

ROUND

3

CYLINDRICAL

BOTTOM

O-PBCY-W3

Not Qualified

2SA673A

Renesas Electronics

PNP

SINGLE

NO

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

10

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SD2121L

Renesas Electronics

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

20

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

FN1L4Z-T1B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

2SB647DTZ-E

Renesas Electronics

PNP

SINGLE

NO

140 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

160

150 Cel

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KN4L4L-T2

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GA1A4Z-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

GN1L3ZM36-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SB624BV3-T2B-A

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

170

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD999CK-T2-AZ

Renesas Electronics

NPN

SINGLE

YES

130 MHz

2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

25 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395