Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTM3906

Renesas Electronics

PNP

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

4.5 pF

SILICON

40 V

70 ns

300 ns

DUAL

R-PDSO-G3

Not Qualified

2SD999CK-AZ

Renesas Electronics

NPN

SINGLE

YES

130 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

25 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

BP1L3N

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.25 W

.7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

BIP General Purpose Small Signal

50

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.13

KN4L4K-AZ

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 2.128

e6

HD2A4M-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

KN4L4L-T2-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

KA4F4N-T2-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA4A4Z-T1B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SD596R3DV-A

Renesas Electronics

NPN

SINGLE

YES

170 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

170

SILICON

25 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

FP1A3M-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

2SD2031RR

Renesas Electronics

NPN

SINGLE

NO

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

60

SILICON

200 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SA893D

Renesas Electronics

PNP

SINGLE

NO

120 MHz

.3 W

.05 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

500

125 Cel

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD655E

Renesas Electronics

NPN

SINGLE

NO

250 MHz

.5 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

400

150 Cel

SILICON

15 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

KN4F3M

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e0

FN4L3M-T2B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

KN4A3Q-T1

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FA4L4Z-T2B

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

HR1A3M-T1-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

KA4L4L-T1

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SB624BV1-T2B

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

25 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

FN4F4M

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.13

e0

KA4L3N-T1-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

TIN BISMUTH

e6

2SA812M4-T2B-A

Renesas Electronics

PNP

SINGLE

YES

180 MHz

.2 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GA1F4ZL66-T1-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

BRA143ECMTL

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

2SB831BC

Renesas Electronics

PNP

SINGLE

YES

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

KA4F4Z-T1

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

KA4A4Z-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SB624BV4-T1B

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

25 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

UPA2003C

Renesas Electronics

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

7

16

IN-LINE

1000

SILICON

TIN LEAD

DUAL

R-PDIP-T16

Not Qualified

e0

2SD667C-E

Renesas Electronics

NPN

SINGLE

NO

140 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

80 V

TIN COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

e2

BN1F4N

Renesas Electronics

PNP

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

HD2L2Q-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

GN4L4M-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA4L3M-L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

KN4F4Z-T2-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

FA4F3R-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD780DW3-T1B-A

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

170

150 Cel

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GN4A4L-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BRA143ETP

Renesas Electronics

PNP

NO

.4 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

2SD756DTZ

Renesas Electronics

NPN

SINGLE

NO

350 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

250

SILICON

120 V

BOTTOM

O-PBCY-T3

Not Qualified

AA1L4ZP(C)-T

Renesas Electronics

NPN

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

KA4L4M-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD756TZ

Renesas Electronics

NPN

SINGLE

NO

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

250

SILICON

120 V

BOTTOM

O-PBCY-W3

Not Qualified

FA4F4M-T2B

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

HD1F2Q-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

KA4L3N-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FN4A4L-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395