Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

KA4L4L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

UPA506T-T2

Renesas Electronics

NPN AND PNP

YES

150 MHz

.3 W

.1 A

BIP General Purpose Small Signal

90

150 Cel

FA4L3N-L-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FB1L3N-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

135

SILICON

GN4F4Z-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SD596DV2

Renesas Electronics

NPN

SINGLE

YES

170 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

25 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

UPA76HA-P

Renesas Electronics

NPN

NO

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

2

7

IN-LINE

Other Transistors

200

125 Cel

SILICON

60 V

SINGLE

R-PSIP-T7

Not Qualified

HR1L3N-T2-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

BN1L4L

Renesas Electronics

PNP

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SB800FK

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

GN4F4N-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.136

NOT SPECIFIED

NOT SPECIFIED

FA4F4N-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SB624BV5-T1B-A

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HR1A4A-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

N0202R-T1-AT-ZL

Renesas Electronics

BA1A4P

Renesas Electronics

NPN

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GA1L4L-T1-A

Renesas Electronics

NPN

YES

.15 W

.2 A

1

BIP General Purpose Small Signal

60

SILICON

KN4L3N-T2-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

KN4F4M-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SD2213RR

Renesas Electronics

NPN

DARLINGTON

NO

1.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

5000

SILICON

80 V

BOTTOM

O-PBCY-W3

Not Qualified

KN4F4N-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FN4L3N-T1B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN1F4Z-M65

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

2SD788BTZ

Renesas Electronics

NPN

SINGLE

NO

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

HD2F3P-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

2SD999CM-AZ

Renesas Electronics

NPN

SINGLE

YES

130 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

25 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

HQ1A3M-T2-AZ

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

FA1F4ZL66-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

FP1A4M-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

FA4F4M-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GA1A3Q-T1-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4L4L-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SA743B

Renesas Electronics

PNP

SINGLE

NO

120 MHz

8 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

50 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

KN4L3Z-T1-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SD2123S

Renesas Electronics

NPN

SINGLE

YES

180 MHz

18 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

160 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

FN4A3Q-T2B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FN4A4L

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

90

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

FN4L4K-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

N0500R-T1-AT

Renesas Electronics

PNP

SINGLE

YES

100 MHz

.7 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

GA1L4ZL61-T2-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GA1A4Z-L67

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SD787RR

Renesas Electronics

NPN

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

16 V

BOTTOM

O-PBCY-W3

Not Qualified

FA4L3Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

135

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO

e0

KA4F4N-T1

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FN1L4ZM62-T1B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

2SC945-R

Renesas Electronics

NPN

SINGLE

NO

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

90

SILICON

50 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

KN4L4L

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

90

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 0.468

e0

FA4A3Q-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395