Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA673AD-E

Renesas Electronics

PNP

SINGLE

NO

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

160

150 Cel

SILICON

50 V

TIN COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e2

GA1F4Z-T2-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

HIT562-HQ

Renesas Electronics

PNP

SINGLE

NO

.8 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

NOT FOR AUTOMOTIVE OR INDUSTRIAL USE

NOT SPECIFIED

NOT SPECIFIED

2SD2228D43-A

Renesas Electronics

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

190

SILICON

16 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

FN1L3ZM37-T2B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

AA1L3Z-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

50 V

200 ns

6000 ns

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

GN4A3Q-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4F3M-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

8

SILICON

FA1F4N-T2B

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SB624BV2-T2B-A

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD780DW2-T2B-A

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FA1F4Z-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

FN4A4P-T2B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD2230-A

Renesas Electronics

NPN

SINGLE

YES

50 MHz

.2 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

16 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SD788

Renesas Electronics

NPN

SINGLE

NO

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

GN4L4M-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA4A4Z-L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

HD2F2Q-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

100

SILICON

GN1L3Z-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

GN4F3R-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KN4F4Z-T2-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

KN4F4M-AZ

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

90

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e6

BRA144ECMTL

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

FA4F4Z-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO

e6

NOT SPECIFIED

NOT SPECIFIED

HD2A3M-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

HR1A4M-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

N0500S-T1-AT

Renesas Electronics

NPN

SINGLE

YES

80 MHz

1 W

.7 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

50 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

KN4L4Z-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

HD2A3M-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

KN4A4P-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KA4F3P-T1

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

UPA2002C-A

Renesas Electronics

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

7

16

IN-LINE

1000

SILICON

TIN BISMUTH

DUAL

R-PDIP-T16

Not Qualified

e6

10

260

KA4L4Z-AZ

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR

e6

GN4L4M-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SA872AERF

Renesas Electronics

PNP

SINGLE

NO

120 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

400

SILICON

120 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BRC114EMPTLL

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

FA4F4M-L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

FN1L4Z-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

HIT468-TZ-HQ

Renesas Electronics

NPN

SINGLE

NO

.8 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

NOT FOR AUTOMOTIVE OR INDUSTRIAL USE

NOT SPECIFIED

NOT SPECIFIED

2SD596DV4-T2B

Renesas Electronics

NPN

SINGLE

YES

170 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

SILICON

25 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

BN1L3Z

Renesas Electronics

PNP

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

AN1L4Z-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

50 V

200 ns

6000 ns

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD789ETZ-E

Renesas Electronics

NPN

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

400

SILICON

50 V

TIN OVER COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

2SB624BV2-T1B-A

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FA1L3Z-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

2SD2123LC

Renesas Electronics

NPN

SINGLE

NO

180 MHz

18 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

100

150 Cel

SILICON

160 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

2SD2031TZ

Renesas Electronics

NPN

SINGLE

NO

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

60

SILICON

200 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

GA4L4Z-T1-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

TIN BISMUTH

e6

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395