Small Signal Bipolar Junction Transistors (BJT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR22PNH6327XTSA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

AEC-Q101

JANTXV2N2369A

Microchip Technology

NPN

SINGLE

NO

500 MHz

.36 W

.2 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

200 Cel

SILICON

15 V

12 ns

18 ns

TIN LEAD

BOTTOM

O-MBCY-W3

COLLECTOR

Qualified

TO-18

e0

MIL-19500/317K

KSC945CGTA

Onsemi

NPN

SINGLE

NO

300 MHz

.15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

150 Cel

SILICON

50 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

MMBT2222ATT1

Onsemi

NPN

SINGLE

YES

300 MHz

.15 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

MMDT5401-7-F

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.2 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

150 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMBTA92,215

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.3 W

.1 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

6 pF

SILICON

300 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SBSP52T1G

Onsemi

NPN

DARLINGTON

YES

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

80 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

TO-261AA

e3

30

260

SMMBTA13LT1G

Onsemi

NPN

SINGLE

YES

125 MHz

.3 W

.3 A

1

Other Transistors

5000

150 Cel

MATTE TIN

1

e3

30

260

BC547BA1

Taiwan Semiconductor

NPN

SINGLE

NO

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.5 W

200

150 Cel

SILICON

45 V

-65 Cel

MATTE TIN

BOTTOM

O-PBCY-T3

1

TO-92

e3

10

260

BC560C

Onsemi

PNP

SINGLE

NO

250 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

380

150 Cel

SILICON

45 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-226AA

e0

235

BC560-C

Infineon Technologies

PNP

SINGLE

NO

250 MHz

.625 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

420

150 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

BC848W,135

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

3 pF

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FMMT493-TP

Micro Commercial Components

NPN

SINGLE

YES

150 MHz

.25 W

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

10

260

KSA1013YTA

Onsemi

PNP

SINGLE

NO

50 MHz

.9 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

150 Cel

SILICON

160 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

e3

KTC3198-BL-M0A2G

Taiwan Semiconductor

NOT SPECIFIED

NOT SPECIFIED

LBC857BDW1T1G

Leshan Radio

PNP

YES

100 MHz

.38 W

.1 A

Other Transistors

220

150 Cel

SBC807-25WT1G

Onsemi

MATTE TIN

1

e3

30

260

SMUN2211T1G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.338 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

35

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX458STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

2N1893S

Microchip Technology

NPN

SINGLE

NO

50 MHz

.8 W

.5 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

200 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

e0

BC546BZL1G

Onsemi

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

65 V

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

40

260

BC807-25/A2,215

NXP Semiconductors

PNP

SINGLE

YES

1

Other Transistors

150 Cel

BC817-40-QVL

Nexperia

NPN

SINGLE

YES

100 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

3 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC817-40-TP

Micro Commercial Components

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

10

260

BC848-C

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

40

260

FCX495TA

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

150 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

KSC945CGBU

Onsemi

NPN

SINGLE

NO

300 MHz

.15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

150 Cel

SILICON

50 V

Tin (Sn)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

MMBT2907A-TP-HF

Micro Commercial Components

PNP

SINGLE

YES

200 MHz

.35 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

60 V

50 ns

110 ns

MATTE TIN

DUAL

R-PDSO-G3

1

e3

10

260

ZTX1053ASTZ

Zetex Plc

NPN

SINGLE

NO

140 MHz

3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

75 V

MATTE TIN

BOTTOM

O-PBCY-W3

1

Not Qualified

e3

10

260

ZTX614

Onsemi

NPN

DARLINGTON

NO

.8 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

10000

SILICON

100 V

BOTTOM

O-PBCY-T3

TO-226AE

2N3440U4

Microchip Technology

BC546BB1G

Taiwan Semiconductor

NPN

SINGLE

NO

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

.5 W

200

150 Cel

SILICON

65 V

-65 Cel

MATTE TIN

BOTTOM

O-PBCY-T3

1

TO-92

e3

10

260

BC548CB1G

Taiwan Semiconductor

NPN

SINGLE

NO

.5 W

.1 A

1

Other Transistors

420

150 Cel

MATTE TIN

1

e3

10

260

BC817-25W-QF

Nexperia

NPN

SINGLE

YES

100 MHz

.29 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

3 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

BC858C-7-F

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BCX54,115

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

45 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

MBT3906DW1T1G

Onsemi

PNP

SEPARATE, 2 ELEMENTS

YES

250 MHz

.15 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

300 ns

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

MMBT2907AQ-7-F

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.35 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

60 V

45 ns

100 ns

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

MMDT3906-7-F

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

250 MHz

.2 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

300 ns

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

MPSA06RLRAG

Onsemi

NPN

SINGLE

NO

100 MHz

.625 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

80 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

PDTA114YU/ZLX

Nexperia

PDTA114YUF

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

PMBT3906,235

NXP Semiconductors

PNP

SINGLE

YES

250 MHz

.25 W

.2 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

4.5 pF

SILICON

40 V

65 ns

300 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

TD62064AFG(O,S,EL)

Toshiba

NPN

COMPLEX

YES

1.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

4

16

SMALL OUTLINE

SILICON

50 V

DUAL

R-PDSO-G16

2N2369ACSM

Tt Electronics Plc

NPN

SINGLE

YES

500 MHz

.2 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

200 Cel

SILICON

15 V

12 ns

18 ns

DUAL

R-CDSO-N3

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

BC327-25RL1G

Onsemi

PNP

SINGLE

NO

260 MHz

.625 W

.8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

150 Cel

SILICON

45 V

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

40

260

BC546BRL1G

Onsemi

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

65 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

BCR35PNH6327XTSA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

150 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395