Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
130 MHz |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
50 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G6 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 1 |
e3 |
AEC-Q101 |
|||||||||||||||||||||||
Microchip Technology |
NPN |
SINGLE |
NO |
500 MHz |
.36 W |
.2 A |
METAL |
SWITCHING |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
20 |
200 Cel |
SILICON |
15 V |
12 ns |
18 ns |
TIN LEAD |
BOTTOM |
O-MBCY-W3 |
COLLECTOR |
Qualified |
TO-18 |
e0 |
MIL-19500/317K |
||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
300 MHz |
.15 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
200 |
150 Cel |
SILICON |
50 V |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
|||||||||||||||||||||||
Onsemi |
NPN |
SINGLE |
YES |
300 MHz |
.15 W |
.6 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
SILICON |
40 V |
35 ns |
285 ns |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e0 |
30 |
235 |
||||||||||||||||||
|
Diodes Incorporated |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
100 MHz |
.2 W |
.2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
Other Transistors |
50 |
150 Cel |
SILICON |
150 V |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
NXP Semiconductors |
PNP |
SINGLE |
YES |
50 MHz |
.3 W |
.1 A |
PLASTIC/EPOXY |
.5 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
25 |
150 Cel |
6 pF |
SILICON |
300 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
NPN |
DARLINGTON |
YES |
1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
2000 |
SILICON |
80 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
YES |
125 MHz |
.3 W |
.3 A |
1 |
Other Transistors |
5000 |
150 Cel |
MATTE TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
NPN |
SINGLE |
NO |
.5 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
.5 W |
200 |
150 Cel |
SILICON |
45 V |
-65 Cel |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
1 |
TO-92 |
e3 |
10 |
260 |
|||||||||||||||||||
Onsemi |
PNP |
SINGLE |
NO |
250 MHz |
.625 W |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
380 |
150 Cel |
SILICON |
45 V |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-226AA |
e0 |
235 |
||||||||||||||||||||
Infineon Technologies |
PNP |
SINGLE |
NO |
250 MHz |
.625 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
420 |
150 Cel |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
||||||||||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
100 MHz |
.2 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
.6 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
110 |
150 Cel |
3 pF |
SILICON |
30 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||
|
Micro Commercial Components |
NPN |
SINGLE |
YES |
150 MHz |
.25 W |
1 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
20 |
150 Cel |
SILICON |
100 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
10 |
260 |
||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
50 MHz |
.9 W |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
160 |
150 Cel |
SILICON |
160 V |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Taiwan Semiconductor |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||
|
Leshan Radio |
PNP |
YES |
100 MHz |
.38 W |
.1 A |
Other Transistors |
220 |
150 Cel |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
MATTE TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
.338 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
BIP General Purpose Small Signal |
35 |
SILICON |
50 V |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G3 |
1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
50 MHz |
.3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
15 |
SILICON |
400 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||||
Microchip Technology |
NPN |
SINGLE |
NO |
50 MHz |
.8 W |
.5 A |
METAL |
SWITCHING |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
40 |
200 Cel |
SILICON |
80 V |
TIN LEAD |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
TO-39 |
e0 |
||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
300 MHz |
.625 W |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
200 |
150 Cel |
SILICON |
65 V |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e1 |
40 |
260 |
||||||||||||||||||
NXP Semiconductors |
PNP |
SINGLE |
YES |
1 |
Other Transistors |
150 Cel |
||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
NPN |
SINGLE |
YES |
100 MHz |
.345 W |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
.7 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
250 |
150 Cel |
3 pF |
SILICON |
45 V |
-65 Cel |
TIN |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||
|
Micro Commercial Components |
NPN |
SINGLE |
YES |
100 MHz |
.3 W |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
250 |
150 Cel |
SILICON |
45 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE |
YES |
250 MHz |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
420 |
SILICON |
30 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOW NOISE |
e3 |
40 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
100 MHz |
1 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
150 V |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
300 MHz |
.15 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
200 |
150 Cel |
SILICON |
50 V |
Tin (Sn) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
|||||||||||||||||||||||
|
Micro Commercial Components |
PNP |
SINGLE |
YES |
200 MHz |
.35 W |
.6 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
50 |
150 Cel |
SILICON |
60 V |
50 ns |
110 ns |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
||||||||||||||||||
|
Zetex Plc |
NPN |
SINGLE |
NO |
140 MHz |
3 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
100 |
SILICON |
75 V |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
1 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
Onsemi |
NPN |
DARLINGTON |
NO |
.8 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
10000 |
SILICON |
100 V |
BOTTOM |
O-PBCY-T3 |
TO-226AE |
||||||||||||||||||||||||||||||
Microchip Technology |
||||||||||||||||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
NPN |
SINGLE |
NO |
.5 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
.5 W |
200 |
150 Cel |
SILICON |
65 V |
-65 Cel |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
1 |
TO-92 |
e3 |
10 |
260 |
||||||||||||||||||
|
Taiwan Semiconductor |
NPN |
SINGLE |
NO |
.5 W |
.1 A |
1 |
Other Transistors |
420 |
150 Cel |
MATTE TIN |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||||||||||
|
Nexperia |
NPN |
SINGLE |
YES |
100 MHz |
.29 W |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
.7 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
160 |
150 Cel |
3 pF |
SILICON |
45 V |
-65 Cel |
DUAL |
R-PDSO-G3 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
200 MHz |
.3 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
420 |
150 Cel |
SILICON |
30 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
130 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
SILICON |
45 V |
TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
TO-243AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
250 MHz |
.15 W |
.2 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
Other Transistors |
30 |
150 Cel |
SILICON |
40 V |
70 ns |
300 ns |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
200 MHz |
.35 W |
.6 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
50 |
150 Cel |
SILICON |
60 V |
45 ns |
100 ns |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
Diodes Incorporated |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
250 MHz |
.2 W |
.2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
Other Transistors |
30 |
150 Cel |
SILICON |
40 V |
70 ns |
300 ns |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
100 MHz |
.625 W |
.5 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
100 |
150 Cel |
SILICON |
80 V |
TIN SILVER COPPER |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
||||||||||||||||||||
Nexperia |
||||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
PNP |
SINGLE WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
e3 |
30 |
260 |
|||||||||||||||||||||||
|
NXP Semiconductors |
PNP |
SINGLE |
YES |
250 MHz |
.25 W |
.2 A |
PLASTIC/EPOXY |
SWITCHING |
.65 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
30 |
150 Cel |
4.5 pF |
SILICON |
40 V |
65 ns |
300 ns |
TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||
Toshiba |
NPN |
COMPLEX |
YES |
1.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
4 |
16 |
SMALL OUTLINE |
SILICON |
50 V |
DUAL |
R-PDSO-G16 |
|||||||||||||||||||||||||||||||
|
Tt Electronics Plc |
NPN |
SINGLE |
YES |
500 MHz |
.2 A |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
NO LEAD |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
30 |
200 Cel |
SILICON |
15 V |
12 ns |
18 ns |
DUAL |
R-CDSO-N3 |
Not Qualified |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
260 MHz |
.625 W |
.8 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
160 |
150 Cel |
SILICON |
45 V |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e1 |
40 |
260 |
||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
300 MHz |
.625 W |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
200 |
150 Cel |
SILICON |
65 V |
TIN SILVER COPPER |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e1 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
150 MHz |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
70 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G6 |
1 |
BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
e3 |
AEC-Q101 |
Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.
Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395