.25 W Small Signal Field Effect Transistors (FET) 156

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BF861C,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

SSM6N56FE,LM

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.235 ohm

.8 A

DUAL

R-PDSO-F6

1

260

6 pF

2N5452

National Semiconductor

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Tin/Lead (Sn/Pb)

e0

BFT46

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

1.5 pF

SI1025X-T1-GE3

Vishay Intertechnology

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.19 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.19 A

DUAL

R-PDSO-F6

1

Not Qualified

LOW THRESHOLD

e3

30

260

2N5524

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5522

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5045

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5198

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5519

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5515

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N3954A

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5547

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5046

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5523

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N3955A

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5517

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5518

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5545

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5521

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5047

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5546

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5520

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5197

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5196

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5199

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5516

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

NVJD5121NT2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

1.6 ohm

.295 A

DUAL

R-PDSO-G6

1

e3

2.5 pF

AEC-Q101

3LN01C-TB-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

3.7 ohm

.15 A

DUAL

R-PDSO-G3

1

TO-236AB

e6

30

260

3LP01C-TB-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

10.4 ohm

.1 A

DUAL

R-PDSO-G3

1

TO-236AB

e6

260

5LP01SP-AC

Onsemi

P-CHANNEL

SINGLE

NO

.25 W

1

.07 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN SILVER COPPER NICKEL

.07 A

3LN01C-TB-H

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

1

.15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.15 A

1

e6

5LP01SP

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.07 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

23 ohm

.07 A

SINGLE

R-PSIP-T3

Not Qualified

NTZD3155CT2H

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

BSR56

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

60 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

NTZD3154NT2H

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

NTZD3155CT1H

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

NTJD5121NT1G-001

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.6 ohm

.295 A

DUAL

R-PDSO-G6

1

e3

30

260

15 pF

NTZD3154NT1H

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

5LN01C-TB-E

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.1 A

1

e6

NTZD3154NT5H

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

NTZD5110NT5G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.294 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.6 ohm

.294 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NTZD3155CT5G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

20 pF

NTZD3155CT5H

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

PMBF107

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

10 pF

PMBF4391T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

30 ohm

.012 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

260

3.5 pF

PMBF4392

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

60 ohm

.006 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

3.5 pF

BF861C

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.