NTZD3155CT5G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTZD3155CT5G
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (Abs) (ID): .54 A; Transistor Element Material: SILICON;
Datasheet	NTZD3155CT5G Datasheet
In Stock	2,047

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.54 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.55 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	20 pF
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.54 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,047	-	-

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