.3 W Small Signal Field Effect Transistors (FET) 296

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BFR30,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

UM6K1NA-TP

Micro Commercial Components

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.96 ohm

.5 A

DUAL

R-PDSO-G6

1

e3

10

260

5.5 pF

2N7002ET3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.26 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

2.5 ohm

.26 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BSS84AKT,115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8.5 ohm

.15 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

e3

30

260

AEC-Q101; IEC-60134

FDG6308P_NL

Fairchild Semiconductor

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

BSS123T-HF

Comchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

7 ohm

.19 A

DUAL

R-PDSO-G3

4.6 pF

MMBF170_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.5 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

10 pF

BSN20T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

20 ohm

.173 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

8 pF

BST82,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.175 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

10 ohm

.175 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

FDG6318PZ

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.78 ohm

.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDG6322CD87Z

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.41 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.22 A

DUAL

R-PDSO-G6

Not Qualified

LOGIC LEVEL COMPATIBLE

HCT7000MTXV

Tt Electronics Plc

N-CHANNEL

SINGLE

YES

.3 W

CERAMIC, METAL-SEALED COFIRED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

.2 A

DUAL

R-CDSO-N3

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

5 pF

BFR30LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

1.5 pF

BFR31T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

260

1.5 pF

BSS84-13-F

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.13 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.13 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY, LOW THRESHOLD

e3

30

260

12 pF

BST82T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.175 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.175 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

6 pF

FDG6321C_NL

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.45 ohm

.5 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PMBFJ177

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

300 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PMBFJ177/DG,215

NXP Semiconductors

P-CHANNEL

YES

.3 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin (Sn)

1

e3

PMBFJ177T/R

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

300 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SSM6N7002FU(TE85LF)

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

.2 A

DUAL

R-PDSO-G6

1.4 pF

LMN200B01-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR

YES

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

.3 V

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

60

150 Cel

SILICON

MATTE TIN

2 ohm

.115 A

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

5 pF

PMBFJ111,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

30 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PMBFJ113,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

100 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2SK117

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

FDG6304P

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.1 ohm

.41 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

2SK117-BL

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

DMC21D1UDA-7B

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.99 ohm

.455 A

DUAL

R-PDSO-N6

e3

260

2.6 pF

BS870-7-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.25 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

2N3909

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

20 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

16 pF

2SK246

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

PMBFJ112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

50 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2N3112

National Semiconductor

P-CHANNEL

NO

.3 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Tin/Lead (Sn/Pb)

e0

2N5363

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N4352

Intersil

P-CHANNEL

SINGLE

NO

.3 W

1

.03 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

AO7800

Alpha & Omega Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.3 ohm

.9 A

DUAL

R-PDSO-G6

14 pF

NVA4001NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.238 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.238 A

DUAL

R-PDSO-G3

1

e3

30

260

6 pF

AEC-Q101

2N3993

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

150 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

4.5 pF

3N158A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

A5T3821

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3 pF

2N3909A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

20 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

3 pF

2N3994

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

300 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW LEAKAGE

TO-72

NOT SPECIFIED

NOT SPECIFIED

5 pF

A5T3822

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3 pF

3N207

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

2

.1 A

8

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

400 ohm

.1 A

BOTTOM

O-MBCY-W8

ISOLATED

Not Qualified

TO-76

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

2N5364

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

3N157

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

3N155

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

600 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N3460

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.