1 W Small Signal Field Effect Transistors (FET) 433

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

CPH3457-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

30

260

CPH3448-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.05 ohm

4 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

NTJS3157NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

3.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

235

CPH3348-TL-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

3 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

CPH3351TL

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

1.8 A

DUAL

R-PDSO-G3

CPH3453

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 ohm

.3 A

DUAL

R-PDSO-G3

Not Qualified

FDS6679Z

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

13 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTJS3157NT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

3.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

VN0300L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.64 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

25 pF

CPH3457TL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

3 A

DUAL

R-PDSO-G3

CPH3348-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

3 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

VN2406L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.18 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

20 pF

CPH3456TL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.071 ohm

3.5 A

DUAL

R-PDSO-G3

CPH3457-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

30

260

CPH3455-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3 A

1

e6

30

260

CPH3355-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.156 ohm

2.5 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

FDS4488

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.022 ohm

.0079 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTMD6601NR2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.215 ohm

1.1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

30 pF

CPH3355-TL-H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.156 ohm

2.5 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

BST120

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

12 pF

BST74A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

12 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

10 pF

BST84

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

12 ohm

.25 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

10 pF

BST122

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 ohm

.25 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

10 pF

BST76A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

180 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 ohm

.3 A

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

10 pF

BSN304

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

30 pF

BST86

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

180 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 ohm

.3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

10 pF

BSP304A

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.17 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

17 ohm

.17 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

15 pF

BST100

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

12 pF

BST70A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

12 pF

BSP304T/R

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.17 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

17 ohm

.17 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

BSP304

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.17 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

17 ohm

.17 A

BOTTOM

O-PBCY-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

BSN274

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

270 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

BSS192,135

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

12 ohm

.2 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

CMOS COMPATIBLE

TO-243AA

e3

30

260

15 pF

BSP254A

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

15 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

15 pF

BSS87

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

3 ohm

.4 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

TO-243

e3

30

260

15 pF

BSN254A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.31 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.31 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

BSP204A

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

BSN254

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.31 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

BSP254

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

BSN274A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

270 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

BSN254AAMO

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

BSN254A,126

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

BSS89

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

6 ohm

.3 A

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

225

BSN274T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

270 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

BS107T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.13 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

10 pF

BS107AMO

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.13 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

10 pF

BSS192

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

12 ohm

.2 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

CMOS COMPATIBLE

TO-243AA

e3

30

260

15 pF

BSP204

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.