1 W Small Signal Field Effect Transistors (FET) 433

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

IRFD010

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

1.7 A

DUAL

R-PDIP-T4

e0

IRFD012

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

4

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

1.4 A

DUAL

R-PDIP-T4

e0

2N7618M1

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.07 A

DUAL

R-CDIP-T14

1

MO-036AB

JANTXVR2N7480U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

500 V

ENHANCEMENT MODE

1

22 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.77 ohm

2.5 A

BOTTOM

DRAIN

Qualified

TO-205AF

e0

MIL-19500/675B

2N7632UC

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.89 A

DUAL

R-XDSO-N6

1

2N7628M1

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

.71 A

DUAL

R-CDIP-T14

1

Not Qualified

MO-036AB

BSS192PL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

12 ohm

.19 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

8 pF

AEC-Q101

IRF8852PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7.8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0113 ohm

7.8 A

DUAL

R-PDSO-G8

1

ULTRA LOW RESISTANCE

MO-153AA

IRFL4310PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.2 ohm

1.6 A

SINGLE

R-PSSO-G3

1

DRAIN

Not Qualified

HIGH RELIABILITY

TO-261AA

e3

30

260

BSS87L6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.26 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.26 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

7.3 pF

BSS192PH6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

12 ohm

.19 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

e3

8 pF

AEC-Q101

IRF7751GPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

4.5 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

BSS125

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

45 ohm

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

6 pF

BSS297

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

.48 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.3 ohm

.48 A

BOTTOM

O-PBCY-W3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

30 pF

BSS192P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

12 ohm

.19 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

8 pF

AEC-Q101

IRF7750GPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

4.7 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

BSS129

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

10 pF

BSS192PH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

12 ohm

.19 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

8 pF

AEC-Q101

BSS149

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

.35 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

20 pF

BSS192PE6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

12 ohm

.19 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

255

8 pF

AEC-Q101

BSS87E6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.26 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

10 ohm

.29 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

260

12 pF

IRF7755GPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.051 ohm

3.9 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

BSS124

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

400 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

28 ohm

.12 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

6 pF

IRHLG7970Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.25 ohm

.71 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLUC7930Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.65 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.6 ohm

.65 A

DUAL

R-XDSO-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRHLUC770Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

.89 A

DUAL

R-XDSO-N6

1

Not Qualified

IRHLG770Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

BSS192PL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

12 ohm

.19 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

8 pF

AEC-Q101

BSS192E6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

20 ohm

.15 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

15 pF

BSS295

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1.4 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

1.4 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

75 pF

IRHLUC7970Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.65 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.6 ohm

.65 A

DUAL

R-XDSO-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRF7752GPBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

4.6 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

IRF7756GPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

4.3 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

BSS135

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

.08 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

60 ohm

.08 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

IRHLUC7670Z4

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.75 ohm

.89 A

DUAL

R-XDSO-N6

Not Qualified

CMOS COMPATIBLE

e0

IRHLG730Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLG7930Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.25 ohm

.71 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLUC730Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

.89 A

DUAL

R-XDSO-N6

1

Not Qualified

BSS296

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

.8 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

45 pF

IRHLUC7630Z4

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.35 ohm

.89 A

DUAL

R-XDSO-N6

Not Qualified

CMOS COMPATIBLE

e0

DI9405

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

4.3 A

DUAL

R-PDSO-G8

Not Qualified

e0

DI9410

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.045 ohm

7.3 A

DUAL

R-PDSO-G8

Not Qualified

e0

DI9430

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

5.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

.09 ohm

5.3 A

DUAL

R-PDSO-G8

Not Qualified

e0

DI9400

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.21 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

e0

DI9435

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.1 ohm

5.3 A

DUAL

R-PDSO-G8

Not Qualified

e0

DMC2450UV-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.7 ohm

1.03 A

DUAL

R-PDSO-F6

1

ESD PROTECTED

e3

260

DMN3029LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0186 ohm

5.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMG6968UTS-13

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.023 ohm

5.2 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.