Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.9 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.3 ohm |
1.9 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
55 pF |
AEC-Q101 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.088 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.042 ohm |
5.2 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.4 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.061 ohm |
4.4 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.044 ohm |
4.3 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.088 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.088 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
51 pF |
||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
30 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
3.5 pF |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
100 ohm |
BOTTOM |
O-MBCY-W3 |
1 |
GATE |
Not Qualified |
LOW INSERTION LOSS |
TO-206AA |
e3 |
30 |
260 |
3.5 pF |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
3.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.075 ohm |
3.8 A |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
MO-187AA |
e3 |
260 |
|||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
100 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
3.5 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.065 ohm |
4.4 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
45 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.8 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.046 ohm |
4.1 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Central Semiconductor |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
175 Cel |
SILICON |
-65 Cel |
MATTE TIN OVER NICKEL |
100 ohm |
BOTTOM |
O-MBCY-W3 |
TO-18 |
e3 |
3.5 pF |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
60 ohm |
BOTTOM |
O-MBCY-W3 |
1 |
GATE |
Not Qualified |
LOW INSERTION LOSS |
TO-206AA |
e3 |
30 |
260 |
3.5 pF |
||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
60 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
3.5 pF |
|||||||||||||||||||||||
|
Central Semiconductor |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
175 Cel |
SILICON |
-65 Cel |
MATTE TIN OVER NICKEL |
30 ohm |
BOTTOM |
O-MBCY-W3 |
TO-18 |
e3 |
3.5 pF |
|||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7.3 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.02 ohm |
7.3 A |
DUAL |
R-PDSO-F6 |
Not Qualified |
e4 |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
3.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.04 ohm |
3.8 A |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
e0 |
235 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.073 ohm |
2.5 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
3.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.09 ohm |
3.5 A |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
MO-187AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.008 ohm |
11.5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.05 ohm |
3.3 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.009 ohm |
11.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.065 ohm |
2 A |
DUAL |
R-PDSO-G3 |
42 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
30 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
6 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
50 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
100 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
6 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
30 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
NO |
1.8 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
80 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
NO |
1.8 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
60 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
6 pF |
|||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
29 A |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0285 ohm |
1.6 A |
BOTTOM |
S-PBGA-B4 |
1 |
ULTRA LOW RESISTANCE |
e1 |
30 |
260 |
196 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
29 A |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0285 ohm |
1.6 A |
BOTTOM |
S-PBGA-B4 |
1 |
ULTRA LOW RESISTANCE |
e1 |
30 |
260 |
196 pF |
|||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
1.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.16 ohm |
1.8 A |
DUAL |
S-PDSO-G8 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
3.8 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.04 ohm |
4 A |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
235 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1.8 W |
1 |
8.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
8.2 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1.8 W |
1 |
8.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
8.2 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.036 ohm |
3.1 A |
DUAL |
R-PDSO-G3 |
1 |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
30 |
260 |
IEC-60134 |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.85 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.95 ohm |
.85 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.4 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.5 ohm |
.4 A |
DUAL |
R-PDSO-G4 |
3 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.33 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
6 ohm |
.33 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.065 ohm |
2 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
42 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.085 ohm |
3 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
5.4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.04 ohm |
5.4 A |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
MO-187AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.02 ohm |
7.7 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
5.4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.04 ohm |
5.4 A |
DUAL |
S-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
MO-187AA |
e3 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.