1.8 W Small Signal Field Effect Transistors (FET) 49

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSP171PH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.9 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.3 ohm

1.9 A

DUAL

R-PDSO-G4

1

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

55 pF

AEC-Q101

SI2307CDS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.088 ohm

3.5 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SI2336DS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.042 ohm

5.2 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

SI2377EDS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.061 ohm

4.4 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

DMN6040SVT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.044 ohm

4.3 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

SI2307CDS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.088 ohm

3.5 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SI2307CDS-T1-BE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.088 ohm

3.5 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

51 pF

2N4391

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

30 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

2N4393-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

-55 Cel

Matte Tin (Sn)

100 ohm

BOTTOM

O-MBCY-W3

1

GATE

Not Qualified

LOW INSERTION LOSS

TO-206AA

e3

30

260

3.5 pF

ZXM64P03XTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.075 ohm

3.8 A

DUAL

S-PDSO-G8

1

Not Qualified

LOW THRESHOLD

MO-187AA

e3

260

2N4393

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

100 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

DMP3098LSD-13

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

4.4 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMN4060SVT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.046 ohm

4.1 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

2N4393PBFREE

Central Semiconductor

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

175 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

100 ohm

BOTTOM

O-MBCY-W3

TO-18

e3

3.5 pF

2N4392-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

-55 Cel

Matte Tin (Sn)

60 ohm

BOTTOM

O-MBCY-W3

1

GATE

Not Qualified

LOW INSERTION LOSS

TO-206AA

e3

30

260

3.5 pF

2N4392

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

2N4391PBFREE

Central Semiconductor

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

175 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

30 ohm

BOTTOM

O-MBCY-W3

TO-18

e3

3.5 pF

FDC6000NZ_F077

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

7.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.02 ohm

7.3 A

DUAL

R-PDSO-F6

Not Qualified

e4

MTSF3N03HDR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

3.8 A

DUAL

S-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e0

235

DMN3110S-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.3 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.073 ohm

2.5 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

ZXM64P02XTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.09 ohm

3.5 A

DUAL

S-PDSO-G8

1

Not Qualified

LOW THRESHOLD

MO-187AA

e3

30

260

FDR6674A

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.008 ohm

11.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

DMG3407SSN-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

3.3 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

FDR6580

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.009 ohm

11.2 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

PMF63UNEAX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

2 A

DUAL

R-PDSO-G3

42 pF

AEC-Q101; IEC-60134

2N3970

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

30 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

6 pF

2N4092

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

50 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

5 pF

2N3972

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

100 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

6 pF

2N4091

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

30 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

5 pF

2N5019

Texas Instruments

P-CHANNEL

NO

1.8 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N4093

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

80 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

5 pF

2N5018

Texas Instruments

P-CHANNEL

NO

1.8 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N3971

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

6 pF

CSD13302W

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

CSD13302WT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

MTSF1P02HDR2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

1.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.16 ohm

1.8 A

DUAL

S-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e0

235

MTSF3N02HDR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.8 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

4 A

DUAL

S-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTLJS3A18PZTWG

Onsemi

P-CHANNEL

SINGLE

YES

1.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

NTLJS3A18PZTXG

Onsemi

P-CHANNEL

SINGLE

YES

1.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

PMV37EN,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.036 ohm

3.1 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

IEC-60134

SPNX6N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.85 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

.85 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

AVALANCHE RATED

SPN02N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.5 ohm

.4 A

DUAL

R-PDSO-G4

3

Not Qualified

e3

260

SPN01N50M2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.33 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.33 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

PMF63UNEA

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.065 ohm

2 A

DUAL

R-PDSO-G3

1

e3

30

260

42 pF

AEC-Q101; IEC-60134

DMN6070SFCL-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.085 ohm

3 A

DUAL

S-PDSO-N3

1

DRAIN

e4

30

260

ZXM64N02XTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

5.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

5.4 A

DUAL

S-PDSO-G8

1

Not Qualified

LOW THRESHOLD

MO-187AA

e3

30

260

DMT3020LFDB-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.02 ohm

7.7 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

ZXM64N02XTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

5.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

5.4 A

DUAL

S-PDSO-G8

1

Not Qualified

LOW THRESHOLD

MO-187AA

e3

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.