Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
10 |
260 |
18 pF |
||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
50 mJ |
1.5 A |
4 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.76 ohm |
1.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
30 |
260 |
15 pF |
|||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.018 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
DRAIN |
AVALANCHE RATED |
TO-261AA |
18 pF |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
5.3 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.058 ohm |
5.3 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.76 ohm |
1.5 A |
DUAL |
R-PDSO-G4 |
DRAIN |
AVALANCHE RATED |
TO-261AA |
15 pF |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
18 pF |
|||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.013 ohm |
12 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.036 ohm |
4 A |
DUAL |
R-PDSO-C8 |
1 |
e3 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.036 ohm |
4 A |
DUAL |
R-PDSO-C8 |
1 |
e3 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0355 ohm |
6.8 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.85 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.09 ohm |
2.85 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE MATTE TIN |
.058 ohm |
4 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
|||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e0 |
18 pF |
||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
30 |
260 |
18 pF |
||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0165 ohm |
6.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
NOT SPECIFIED |
NOT SPECIFIED |
18 pF |
||||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.1 W |
150 Cel |
SILICON |
-55 Cel |
.007 ohm |
17 A |
DUAL |
R-PDSO-G8 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.022 ohm |
7.1 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.1 ohm |
4 A |
DUAL |
R-PDSO-G8 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.0165 ohm |
6.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
50 mJ |
1.5 A |
4 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.76 ohm |
1.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
30 |
260 |
15 pF |
|||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.85 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.09 ohm |
2.85 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
100 mJ |
2.7 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.2 ohm |
2.7 A |
SINGLE |
R-PSSO-G3 |
1 |
DRAIN |
Not Qualified |
TO-261AA |
e3 |
30 |
260 |
|||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.038 ohm |
12 A |
DUAL |
R-PDSO-G8 |
423 pF |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.1 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.155 ohm |
2.1 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
UNSPECIFIED |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE MATTE TIN |
.1 ohm |
4 A |
DUAL |
R-XDSO-C8 |
1 |
Not Qualified |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.02 ohm |
9.2 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-50 Cel |
Matte Tin (Sn) |
.024 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.018 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Alpha & Omega Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.01 ohm |
10 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
UNSPECIFIED |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.1 ohm |
4 A |
DUAL |
R-XDSO-C8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
30 |
260 |
18 pF |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.105 ohm |
2.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.79 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
2 ohm |
.79 A |
SINGLE |
R-PSSO-G3 |
3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
30 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.055 ohm |
4 A |
DUAL |
R-PDSO-C8 |
1 |
e3 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0085 ohm |
10 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0085 ohm |
10 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.1 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.183 ohm |
2.1 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
36 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.007 ohm |
11 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.1 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.155 ohm |
2.1 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE MATTE TIN |
.024 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.055 ohm |
4 A |
DUAL |
R-PDSO-C8 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-50 Cel |
PURE MATTE TIN |
.058 ohm |
4 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
15 ohm |
.3 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.38 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
15 ohm |
.38 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
15 ohm |
.3 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7.8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
7800 ohm |
5.2 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MO-153AB |
NOT SPECIFIED |
NOT SPECIFIED |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.