YES Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SI2365EDS-T1-BE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.041 ohm

5.9 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BSS138-13-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.2 A

DUAL

R-PDSO-G3

1

e3

30

260

8 pF

CSD13381F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.4 ohm

2.1 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

3.3 pF

PMV65XPVL

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.074 ohm

2.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

SIS407ADN-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.009 ohm

18 A

DUAL

R-PDSO-F5

DRAIN

e3

40

245

DMP2035UQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.045 ohm

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

SI2366DS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.036 ohm

5.8 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

260

30 pF

SI4497DY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0033 ohm

36 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

SSM3J332R

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.042 ohm

6 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

65 pF

DMN3731U-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.58 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.46 ohm

.9 A

DUAL

R-PDSO-G3

1

e3

260

5 pF

DMN6040SVT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.044 ohm

4.3 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

FDS6912A_NL

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.028 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

MMBFJ112_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

50 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

5 pF

NTHD4102PT1G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.1 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.08 ohm

2.9 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

NX2301P

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.19 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

PMCXB900UELZ

Nexperia

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.62 ohm

.6 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

PMV65XPE

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.078 ohm

2.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

SI4848DY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.085 ohm

2.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

2SK436-20-TB

Sanyo Electric

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

BSL308CH6327XTSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

260

17 pF

AEC-Q101

DMN60H080DS-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

290 ohm

.07 A

DUAL

R-PDSO-G3

1

e3

30

260

DMN63D8LV-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.26 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.5 ohm

.22 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

NTTFS4C06NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

67 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0061 ohm

11 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

PMV65XPEA

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.078 ohm

2.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

DMP21D0UFB4-7B

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.17 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.099 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.495 ohm

1.17 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

FAST SWITCHING, LOW THRESHOLD

e4

30

260

10.7 pF

PMV65XP/MI

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.074 ohm

2.8 A

DUAL

R-PDSO-G3

LOW THRESHOLD

TO-236AB

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

BSS123L6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

6.3 pF

BSS159NH6327XTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

.23 A

DUAL

R-PDSO-G3

5.9 pF

DMP2165UW-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.09 ohm

2.5 A

DUAL

R-PDSO-G3

1

e3

260

FDT86113LZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.1 ohm

3.3 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

e3

30

260

5 pF

SI2324DS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.234 ohm

2.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

TSM2301CXRF

Taiwan Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

2.8 A

DUAL

R-PDSO-G3

3

Not Qualified

ULTRA-LOW RESISTANCE

10

260

DMG1012T-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.28 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.4 ohm

.63 A

DUAL

R-PDSO-G3

1

e3

30

260

5.37 pF

DMN61D8L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.4 ohm

.47 A

DUAL

R-PDSO-G3

1

e3

260

FDS4435

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.02 ohm

8.8 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

RRR040P03TL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.045 ohm

4 A

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

BSP230115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

17 ohm

.21 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

15 pF

BSS169L6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.17 A

DUAL

R-PDSO-G3

7 pF

BSS84PL6327XT

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

8 ohm

.17 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

3 pF

MMBF4093

Onsemi

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

80 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

5 pF

SI1062X-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.22 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.22 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.42 ohm

.53 A

DUAL

R-PDSO-F3

1

e3

30

260

SI2393DS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0227 ohm

6.9 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

55 pF

BSS84Q-13-F

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.13 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.13 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

12 pF

AEC-Q101

DMN3065LW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.052 ohm

4 A

DUAL

R-PDSO-G3

1

e3

30

260

DMN62D0UDW-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

2 ohm

.35 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

FDC3612

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.125 ohm

2.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

JANSF2N7616UBN

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.68 ohm

.8 A

DUAL

R-XDSO-N3

ISOLATED

Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

MIL-19500/744

SN7002NL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

5 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

4.2 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.