Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZVP1320ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.07 A

SINGLE

R-PSIP-W3

Not Qualified

UZVP4525TC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14 ohm

.197 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZVP3310ASTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZXMN3A01FTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.12 ohm

1.8 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

ZVP0120ASTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

16 ohm

.11 A

SINGLE

R-PSIP-W3

Not Qualified

ZVP3310ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZVN3310ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BST82TC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.175 A

DUAL

R-PDSO-G3

Not Qualified

BST86TA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

180 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

10 ohm

.3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e0

10

235

10 pF

BS208B

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.83 W

150 Cel

SILICON

14 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

UBSS84TA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.13 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVP0120ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

16 ohm

.11 A

SINGLE

R-PSIP-W3

Not Qualified

DMT3020LFDF-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

ADTB113ZCQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZXM41N10F

Diodes Incorporated

N-CHANNEL

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

12 ohm

.17 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD

e3

260

4 pF

UZXM62N03GTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.11 ohm

3.4 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

40

260

ZVP3310ASTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DMC6070LND-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.085 ohm

2.4 A

DUAL

S-PDSO-F8

e3

260

ZXMD63C02XTC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.25 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.13 ohm

2.4 A

DUAL

S-PDSO-G8

DRAIN

FAST SWITCHING, LOW THRESHOLD

MO-187AA

e3

30

260

50 pF

DMT10H052LFDF-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

UZVN4424Z

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5.5 ohm

.3 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOW THRESHOLD

e3

40

260

15 pF

UZVP3306F

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

14 ohm

.09 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

8 pF

UBSS123ATA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.17 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVP0120AM1

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

32 ohm

.11 A

SINGLE

R-PSSO-G3

Not Qualified

UZXM64N03X

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.06 ohm

3.9 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVN2110AM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

UZXMN10A11GTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.6 ohm

1.9 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

40

260

ZXMHC10A07T8TC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.7 ohm

1 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZXMN2A01F

Diodes Incorporated

N-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

2 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMT4008LFDF-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

ZVP0540ASMTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

150 ohm

.045 A

SINGLE

R-PSSO-G3

Not Qualified

UZXM64N02XTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

5.4 A

DUAL

S-PDSO-G8

Not Qualified

LOW THRESHOLD

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

UZXM62P03E6TC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

1.5 A

DUAL

R-PDSO-G6

Not Qualified

LOW THRESHOLD

NOT SPECIFIED

NOT SPECIFIED

ZVN2120A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.7 W

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

.18 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.18 A

BOTTOM

O-PBCY-W3

1

Not Qualified

e3

260

7 pF

FMMJ174TA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

85 ohm

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZVN4525E6TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8.5 ohm

.23 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVN2110CSTOF

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSIP-T3

Not Qualified

DMC62D0SVQ-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.84 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.571 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

260

2.9 pF

AEC-Q101

DMB54D0UDW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

220

150 Cel

SILICON

MATTE TIN

4 ohm

.16 A

DUAL

R-PDSO-G6

1

Not Qualified

ESD PROTECTION, LOW THRESHOLD

e3

30

260

DMT4014LDV-7

Diodes Incorporated

MATTE TIN

e3

260

DMN4027SSDQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

17.2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.027 ohm

5.4 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMC3401LDW-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.4 ohm

.8 A

DUAL

R-PDSO-G6

1

e3

260

10 pF

UZVP4424ASTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

15 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZXM61N02FTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.18 ohm

1.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD

e3

40

260

UZXMP3A16GTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.045 ohm

5.4 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOW THRESHOLD

e3

40

260

ZVP1320ASM

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.07 A

SINGLE

R-PSSO-G3

Not Qualified

DMC6070LFDH-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

3.1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.085 ohm

3.1 A

DUAL

S-PDSO-N8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

UZVN3306FTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.15 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

8 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.