Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMT35M4LFDF-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.7 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0069 ohm

13 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

LTS8810

Diodes Incorporated

DMS3012SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMT3020UFDB-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

AF01N60CZTR-E1

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

15 ohm

.3 A

BOTTOM

O-PBCY-T3

TO-92

5 pF

UZXMD63N03XTA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.135 ohm

2.3 A

DUAL

S-PDSO-G8

Not Qualified

LOW THRESHOLD

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

ZVP3306ASMTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

14 ohm

.16 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMG7410SFGQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZVP3306AM1

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

14 ohm

.16 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DTM3A25P20NFDB-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.47 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0004 ohm

.63 A

DUAL

S-PDSO-N6

DRAIN

e4

260

5.37 pF

DMT12H090LFDF4-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

115 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.6 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.09 ohm

3.4 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

DMG7410SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

5.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

UZXM64P02XTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

3.5 A

DUAL

S-PDSO-G8

Not Qualified

LOW THRESHOLD

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

UZVP4525ZTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

14 ohm

.205 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e3

40

260

DMN4035LQ-7

Diodes Incorporated

MATTE TIN

e3

260

UZXMD63P02XTA

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.27 ohm

1.7 A

DUAL

S-PDSO-G8

Not Qualified

LOW THRESHOLD

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

UZXMD63C03XTA

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.135 ohm

2.3 A

DUAL

S-PDSO-G8

Not Qualified

LOW THRESHOLD

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

DMT3009LEV-7

Diodes Incorporated

MATTE TIN

e3

260

ZXMHC3A01N8TC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

1.36 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

2.72 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.125 ohm

2.17 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

UZXMP6A13FTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.4 ohm

.9 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD

e3

40

260

ZVN2110CSTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

DMW2013UFDEQ-7

Diodes Incorporated

MATTE TIN

1

e3

30

260

UZVP2106ASTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

5 ohm

.28 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZXMP4A16GTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.06 ohm

4.6 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

40

260

FMMTA92QTA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.35 W

.2 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

6 pF

SILICON

300 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101; MIL-STD-202

DDA114YK-7

Diodes Incorporated

TIN LEAD

1

UZXMN3A02X8TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 ohm

5.3 A

DUAL

S-PDSO-G8

Not Qualified

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

ZVN2110C

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

8 pF

ZVP1320ASTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.07 A

SINGLE

R-PSIP-W3

Not Qualified

BS817T7-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.31 W

150 Cel

SILICON

.1 A

DUAL

R-PDSO-G3

Not Qualified

UZVN3306A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.27 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

8 pF

DI9942

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

YES

2 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

.175 ohm

2.5 A

DUAL

R-PDSO-G8

Not Qualified

e0

UZVN3306ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

5 ohm

.27 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DMT3020LFDBQ-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

UZVN2106A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

.45 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

20 pF

CECC

ZCN0545ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

ZVN2110CSM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSSO-G3

Not Qualified

UZVN4106F

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

2.5 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

8 pF

UZVN2110ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

4 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DMT6030LFCL-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

UZXMN2A02X8TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 ohm

7.6 A

DUAL

R-PDSO-G8

Not Qualified

LOW THRESHOLD

NOT SPECIFIED

NOT SPECIFIED

UZXM64N03XTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

5 A

DUAL

S-PDSO-G8

Not Qualified

LOW THRESHOLD

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

UZXMN10A07ZTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.7 ohm

1 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOW THRESHOLD

e3

40

260

ZVP0535AM1

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

350 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.05 A

SINGLE

R-PSSO-G3

Not Qualified

ZVN1409ASMTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

90 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

250 ohm

.01 A

SINGLE

R-PSSO-G3

Not Qualified

ZVN1409ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

90 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

250 ohm

.01 A

SINGLE

R-PSIP-W3

Not Qualified

BS870Q-7-F

Diodes Incorporated

MATTE TIN

1

e3

30

260

UZVP2110ASTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

8 ohm

.23 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.