Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZXM64N02X

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.05 ohm

3.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

DMN2450UFB4Q-7R

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMP3018SFK-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0145 ohm

10.2 A

DUAL

R-PDSO-N4

DRAIN

HIGH RELIABILITY

e4

260

686 pF

AEC-Q101

DMG6301UDW-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.37 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

.24 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

2N7002VA-7-L

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.28 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

13.5 ohm

.28 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e0

5 pF

DMN16M9UCA6-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.4 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-XBCC-N6

e4

260

325 pF

DMP32D5SFB-7B

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

ZVN0540DWP

Diodes Incorporated

N-CHANNEL

SINGLE

YES

UNSPECIFIED

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

50 ohm

UPPER

R-XUUC-N2

Not Qualified

e0

10

235

ZVN4106F

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.5 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

8 pF

BS107PM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

23 ohm

.12 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMN62D1SFB-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.47 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.41 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

1.4 ohm

.41 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

DMN3026LVTQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMP2109UVT-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.2 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.08 ohm

3.7 A

DUAL

R-PDSO-G6

1

e3

30

260

87 pF

ZVN3310AM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.2 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVN0120ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

16 ohm

.16 A

SINGLE

R-PSIP-W3

Not Qualified

ZVN0535AM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

350 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

50 ohm

.09 A

SINGLE

R-PSSO-G3

Not Qualified

CECC

ZVP2120CSMTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

25 ohm

.12 A

SINGLE

R-PSSO-G3

Not Qualified

MMBF170-13-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.3 W

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.5 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

5 pF

AEC-Q101

BS107PTSMTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

28 ohm

.12 A

SINGLE

R-PSSO-G3

Not Qualified

DMN2008LFU-13

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0096 ohm

14.5 A

DUAL

R-PDSO-N6

1

DRAIN

e4

260

DMP2110UW-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.00065 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.1 ohm

2 A

DUAL

R-PDSO-G3

e3

260

47 pF

ZVN4310ASMTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.65 ohm

.9 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMP1096UCB4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.82 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

2.6 A

4

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.152 ohm

2.4 A

BOTTOM

S-PBGA-B4

1

HIGH RELIABILITY

e1

30

260

DMP3068LVT-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMP3018SFV-13

Diodes Incorporated

MATTE TIN

1

e3

260

ZVN3310ASM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.2 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMP2075UFDB-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

ZVN0124ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

16 ohm

.16 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

260

ZVP4424CSTOF

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

9 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

15 pF

BS107PTM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

28 ohm

.12 A

SINGLE

R-PSSO-G3

Not Qualified

DMN2019UTS-13

Diodes Incorporated

N-CHANNEL

YES

.78 W

5.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

5.4 A

1

e3

30

260

ZXMP4A16GQTA

Diodes Incorporated

MATTE TIN

1

e3

30

260

DMN62D0UWQ-13

Diodes Incorporated

Matte Tin (Sn)

1

e3

NOT SPECIFIED

NOT SPECIFIED

DMN3021LFDF-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.03 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.015 ohm

9.3 A

DUAL

S-PDSO-N6

DRAIN

e4

260

81 pF

DMN3270UVT-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

1.08 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.27 ohm

1.6 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

7.5 pF

AEC-Q101

DMN2100UDM-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.055 ohm

3.3 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

84 pF

DMG3415UFY4Q-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

16 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.039 ohm

.0025 A

DUAL

R-PDSO-N3

DRAIN

HIGH RELIABILITY

e4

260

AEC-Q101

DMP1005UFDF-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0085 ohm

12.8 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

DMN33D8LT-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.115 A

DUAL

R-PDSO-G3

e3

260

8 pF

ZVN0545ASM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

50 ohm

.09 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMN2310UFB4-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.14 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4.7 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.175 ohm

2.1 A

BOTTOM

R-PBCC-N3

DRAIN

e4

260

6 pF

MIL-STD-202

ZXMS6001N3QTA

Diodes Incorporated

N-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.5 W

150 Cel

SILICON

-40 Cel

MATTE TIN

.675 ohm

1.1 A

DUAL

R-PDSO-G4

1

SOURCE

ESD PROTECTED

e3

30

260

AEC-Q101

2N7000PSMTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.2 A

SINGLE

R-PSSO-G3

Not Qualified

ZVN3320ASM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

25 ohm

.1 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVP2106CSTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.28 A

SINGLE

R-PSIP-W3

Not Qualified

DMN3009LFVWQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMP2110UVT-7

Diodes Incorporated

MATTE TIN

1

e3

30

260

ZXMNS3BM832TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

10

FLATPACK

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

2.72 A

QUAD

R-PQFP-F10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.