Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMP31D7LT-7

Diodes Incorporated

MATTE TIN

e3

260

ZVNL120CSTOF

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.18 A

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DMP56D0UFB-7B

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.425 W

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.2 A

e4

30

260

DMN3018SFGQ-13

Diodes Incorporated

MATTE TIN

e3

260

DMP3018SFV-7

Diodes Incorporated

MATTE TIN

1

e3

260

DMN62D1LFDQ-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

DMP6185SK3-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.15 ohm

3.6 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-252

e3

30

260

32 pF

AEC-Q101

DMP2040UFDF-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

BSS84-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

10 ohm

.13 A

DUAL

R-PDSO-G3

Not Qualified

e0

12 pF

DMN3401LDW-13R

Diodes Incorporated

MATTE TIN

1

e3

30

260

ZXMN6A11GFTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.9 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

2.7 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

260

DMP32D9UFO-7B

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

BS170PSTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

5 ohm

.27 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

ZVN0117TASMTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

170 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

23 ohm

.16 A

SINGLE

R-PSSO-G3

Not Qualified

DMN53D0U-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Matte Tin (Sn)

3 ohm

.3 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMP2039UFDE-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

6.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.027 ohm

5.4 A

DUAL

R-PDSO-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMP57D5UFB-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.425 W

PLASTIC/EPOXY

SWITCHING

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

6 ohm

.2 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

260

DMN2012UCA6-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.3 W

UNSPECIFIED

SWITCHING

24 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-XBCC-N6

e4

102 pF

DMN2016LHAB-7

Diodes Incorporated

N-CHANNEL

YES

1.65 W

7.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

7.5 A

1

e4

30

260

DMP2900UW-13

Diodes Incorporated

MATTE TIN

e3

260

DMN2004WKQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMN2710UTQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.52 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.45 ohm

.87 A

DUAL

R-PDSO-G3

e3

260

6.5 pF

AEC-Q101; IATF 16949

2N7000P

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

5 pF

DMN61D9U-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.38 A

DUAL

R-PDSO-G3

e3

260

2.5 pF

BS250F

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.09 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

14 ohm

.09 A

DUAL

R-PDSO-G3

Not Qualified

30

260

VN10LPSM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

7.5 ohm

.27 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVN4206CSMTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

.6 A

SINGLE

R-PSSO-G3

Not Qualified

DMN53D0LT-13

Diodes Incorporated

MATTE TIN

1

e3

30

260

2N7002TQ-13-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0075 ohm

.115 A

DUAL

R-PDSO-G3

1

e3

260

5 pF

AEC-Q101; IATF 16949

DMG3413L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.095 ohm

2.5 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

ZXMP3A17DN8TC

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXMN3A14FQTA

Diodes Incorporated

MATTE TIN

1

e3

30

260

DMN2026UVT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.024 ohm

6.2 A

DUAL

R-PDSO-G6

e3

260

37 pF

DMN2029UVT-7

Diodes Incorporated

MATTE TIN

e3

30

260

DMN3028L-13

Diodes Incorporated

MATTE TIN

e3

260

ZXMN3A04DN8TC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 ohm

6.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

DMP31D7L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.46 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.9 ohm

.58 A

DUAL

R-PDSO-G3

e3

260

3 pF

ZVP4424CSTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

9 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

15 pF

DMN3020UFDF-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMP2004TK-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.43 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.1 ohm

.43 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

20 pF

BS250PSMTA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

14 ohm

.23 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMP2010UFV-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0125 ohm

50 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

ZVN4206CSTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

.6 A

SINGLE

R-PSIP-W3

Not Qualified

DMN1016UCB6-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.47 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.023 ohm

5.5 A

BOTTOM

R-PBGA-B6

HIGH RELIABILITY

e1

260

55 pF

AEC-Q101

ZXM62N03E6TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.11 ohm

3.2 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW THRESHOLD

e3

30

260

DMN2300UFB-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.78 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.175 ohm

1.32 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

ZXMN3F318DN8TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

4.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

DMN3029LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0186 ohm

5.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.