Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMN10H700S-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

.7 ohm

.7 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

AEC-Q101

ZVN3306DWP

Diodes Incorporated

N-CHANNEL

SINGLE

YES

UNSPECIFIED

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

5 ohm

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

DMN3009LFVW-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMP57D5UV-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.16 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.16 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMP2021UFDE-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMN63D1L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3 ohm

.38 A

DUAL

R-PDSO-G3

ESD PROTECTED, HIGH RELIABILITY

e3

260

AEC-Q101

DMN2055UWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.65 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.046 ohm

3.1 A

DUAL

R-PDSO-G3

e3

260

37 pF

AEC-Q101; IATF 16949

DMN3027LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.07 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0186 ohm

5.3 A

DUAL

S-PDSO-N5

DRAIN

HIGH RELIABILITY

e3

260

70 pF

AEC-Q101

BSS123A

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.17 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD

e3

30

260

DMP1022UFDE-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.03 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

9.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.016 ohm

9.1 A

DUAL

S-PDSO-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

DMN2053UVTQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMN2015UFDF-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMN1019UFDE-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.17 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

11 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.01 ohm

1.1 A

DUAL

R-PDSO-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

ZVN4206CSM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

.6 A

SINGLE

R-PSSO-G3

Not Qualified

DMP6250SFDF-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMC25D1UVT-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.055 ohm

3.9 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

260

3.3 pF

DMC2004VK-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.67 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

.67 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

20 pF

DMN33D8LTQ-7

Diodes Incorporated

MATTE TIN

e3

30

260

DMN31D5L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.52 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.5 A

DUAL

R-PDSO-G3

1

e3

30

260

10 pF

DMN3410-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.058 ohm

4 A

DUAL

R-PDSO-G3

Not Qualified

DMN3410-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.058 ohm

4 A

DUAL

R-PDSO-G3

Not Qualified

DMP22D5UDJ-7

Diodes Incorporated

MATTE TIN

e3

260

DMN3730U-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.71 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.94 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.46 ohm

.75 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

ZXMN10A07FTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.806 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.56 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.7 ohm

.7 A

DUAL

R-PDSO-G3

Not Qualified

30

260

ZXM62N02E6TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.1 ohm

DUAL

R-PDSO-G6

Not Qualified

e3

30

260

DMN1014UFDF-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.016 ohm

8 A

DUAL

S-PDSO-N6

e4

260

121 pF

DMN63D1LT-13

Diodes Incorporated

MATTE TIN

e3

260

DMN31D5UFZQ-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

1.5 ohm

.41 A

BOTTOM

R-PBCC-N3

DRAIN

e4

260

1.8 pF

AEC-Q101; IATF 16949

DMN2991UFZQ-7B

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

DMP31D7LQ-7

Diodes Incorporated

MATTE TIN

e3

LMN200B01

Diodes Incorporated

DMG1029SVQ-7A

Diodes Incorporated

Matte Tin (Sn)

e3

DMP31D7LQ-13

Diodes Incorporated

MATTE TIN

e3

DMN67D8LT-13

Diodes Incorporated

MATTE TIN

e3

260

DMN67D8LT-7

Diodes Incorporated

MATTE TIN

e3

260

DMN62D0UV-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.74 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.49 A

DUAL

R-PDSO-F6

e3

260

2.4 pF

DMN62D0UV-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.74 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.49 A

DUAL

R-PDSO-F6

e3

260

2.4 pF

DMC2991UDA-7B

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMP22D5UDA-7B

Diodes Incorporated

MATTE TIN

e3

260

DMP32D9UDAQ-7B

Diodes Incorporated

MATTE TIN

e3

260

DMN3061SVTQ-13

Diodes Incorporated

MATTE TIN

e3

DMN31D5UDAQ-7B

Diodes Incorporated

MATTE TIN

e3

260

DMN3061SVTQ-7

Diodes Incorporated

MATTE TIN

e3

DMN1032UCP4-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.01 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

15 A

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER

.042 ohm

4.8 A

BOTTOM

S-XBCC-N4

e2

31 pF

DMP2042UCP4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.86 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER

.065 ohm

2.9 A

BOTTOM

S-XBCC-N4

e2

11 pF

DMN61D9UV-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

3.5 ohm

.5 A

DUAL

R-PDSO-F6

e3

2.5 pF

MIL-STD-202

DMN61D9UV-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

3.5 ohm

.5 A

DUAL

R-PDSO-F6

e3

2.5 pF

MIL-STD-202

DMP31D0UFB4-7B-55

Diodes Incorporated

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.