Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMN2300U-7-93

Diodes Incorporated

DMN2990UDJ-7-55

Diodes Incorporated

DMN2991UDA-7B-55

Diodes Incorporated

DMN3900UFA-7B-55

Diodes Incorporated

DMP32D9UFZ-7B-G-55

Diodes Incorporated

DMP210DUFB4-7B-01

Diodes Incorporated

DMN2991UFZ-7B-55

Diodes Incorporated

DMN2300UFB4-7B-55

Diodes Incorporated

DMN31D5UDJ-7-55

Diodes Incorporated

DMP31D1UQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.58 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1 ohm

.62 A

DUAL

R-PDSO-G3

5.8 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP31D1UQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.58 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1 ohm

.62 A

DUAL

R-PDSO-G3

5.8 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP22D5UDR4-7

Diodes Incorporated

DMN2991UDR4-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.7 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.99 ohm

.5 A

DUAL

S-PDSO-N6

DRAIN

3.2 pF

MIL-STD-202

DMC2991UDR4-7

Diodes Incorporated

DMN2991UDR4-7R

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.7 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.99 ohm

.5 A

DUAL

S-PDSO-N6

DRAIN

3.2 pF

MIL-STD-202

DMN2046UVT-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.94 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

2.6 A

DUAL

R-PDSO-G6

27 pF

MIL-STD-202

DMN2046UVT-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.94 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

2.6 A

DUAL

R-PDSO-G6

27 pF

MIL-STD-202

DMN6066SSSQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.066 ohm

3.7 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZVN3310DWP

Diodes Incorporated

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

10 ohm

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

ZVP4424CSTOE

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

9 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

15 pF

DMN13H750S-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.26 W

PLASTIC/EPOXY

SWITCHING

130 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

1 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

11 pF

AEC-Q101

BSS84DWQ-13-F

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.13 A

DUAL

R-PDSO-G6

1

e3

12 pF

ZVN0535ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

350 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

40 ohm

.09 A

SINGLE

R-PSIP-W3

Not Qualified

DMN3016LFDFQ-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

2N7002W-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

7.5 ohm

.115 A

DUAL

R-PDSO-G3

Not Qualified

e0

5 pF

DMN2016UTS-13

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.88 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8.58 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0145 ohm

8.58 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

2N7002DWAQ-13

Diodes Incorporated

MATTE TIN

1

e3

30

260

ZXMN3A02N8TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 ohm

9 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e3

30

260

DMP1009UFDF-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.014 ohm

11 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

DMP21D0UFB-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

260

DMN3026LVTQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZXM62N03E6TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.11 ohm

3.2 A

DUAL

R-PDSO-G6

Not Qualified

LOW THRESHOLD

DMN2990UFA-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.51 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.99 ohm

.38 A

DUAL

R-PDSO-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

5.6 pF

AEC-Q101

ZXMP3A17FTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.806 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.21 ohm

1.4 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

DMN63D1LW-13

Diodes Incorporated

MATTE TIN

e3

260

DMP2100UCB9-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

2

4 A

9

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.0175 ohm

3 A

BOTTOM

S-PBGA-B9

1

HIGH RELIABILITY

e1

30

260

55 pF

AEC-Q101

DMN6040UFDE-7

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.03 W

ENHANCEMENT MODE

1

5.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

5.3 A

1

e4

ZVP2106ASMTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.28 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMC25D0UVT-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

3.2 A

DUAL

R-PDSO-G6

HIGH RELIABILITY

e3

260

47 pF

DMP1008UCB9-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.53 W

PLASTIC/EPOXY

SWITCHING

8 V

BALL

SQUARE

ENHANCEMENT MODE

1

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0091 ohm

13.2 A

BOTTOM

S-PBGA-B9

e1

260

DMN33D8LT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.115 A

DUAL

R-PDSO-G3

e3

260

8 pF

DMN30H4D1S-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.43 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

.43 A

DUAL

R-PDSO-G3

3

e3

30

260

7 pF

ZVNL120CSTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.18 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DMN3025LFDF-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

BS107PTSM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

28 ohm

.12 A

SINGLE

R-PSSO-G3

Not Qualified

DMP25H18DLFDE-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.4 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

14 ohm

.26 A

DUAL

S-PDSO-N3

DRAIN

LOW THRESHOLD

e4

260

4 pF

DMN65D9L-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.67 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

.335 A

DUAL

R-PDSO-G3

e3

260

2.6 pF

ZVN4206CSTOE

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1 ohm

.6 A

SINGLE

R-PSIP-T3

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.