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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | DMP2100UCB9-7 |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; No. of Terminals: 9; |
Datasheet | DMP2100UCB9-7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 3 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 9 |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | S-PBGA-B9 |
No. of Elements: | 2 |
Package Shape: | SQUARE |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | .0175 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 55 pF |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e1 |
Minimum DS Breakdown Voltage: | 20 V |
Additional Features: | HIGH RELIABILITY |
Reference Standard: | AEC-Q101 |
Maximum Drain Current (Abs) (ID): | 4 A |
Peak Reflow Temperature (C): | 260 |