Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMP3056LSSQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

15 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.045 ohm

4.9 A

DUAL

R-PDSO-G8

e3

260

102 pF

AEC-Q101; IATF 16949

DMC3016LDV-7

Diodes Incorporated

MATTE TIN

e3

260

DMN3190LDW-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.19 ohm

1 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMN6040SVTQ-7

Diodes Incorporated

MATTE TIN

e3

260

ZVN4525ZTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.24 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

8.5 ohm

.24 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e3

30

260

ZXMP10A13FTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.625 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

.7 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

DMN24H11DSQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

.27 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

4.1 pF

AEC-Q101

DMN26D0UDJ-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.23 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.18 A

DUAL

R-PDSO-F6

1

Not Qualified

ESD PROTECTION

e3

30

260

BSS8402DW-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

7.5 ohm

.115 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

5 pF

DMG1016V-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.53 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.7 ohm

.87 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZVN3306ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

5 ohm

.27 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVP3306A

Diodes Incorporated

P-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

.16 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

14 ohm

.16 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

30

260

8 pF

ZXMN3A06DN8TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6.2 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

4.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

DMN53D0L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.6 ohm

.5 A

DUAL

R-PDSO-G3

1

e3

30

260

4 pF

DMP2045UQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZXM61N02FTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.806 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

1.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD

e3

30

260

ZXMS6004FFQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMN3042L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0265 ohm

5.8 A

DUAL

R-PDSO-G3

e3

260

80 pF

ZVN3306ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

5 ohm

.27 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVN4206ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.5 ohm

.6 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

ZXMC4559DN8TC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.055 ohm

3.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

DMN26D0UFB4-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.23 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3 ohm

.24 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

AEC-Q101

DMN5L06DMK-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.305 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.305 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

5 pF

DMP4015SPS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.011 ohm

8.5 A

DUAL

R-PDSO-F5

1

e3

30

260

DMN30H4D0L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.47 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

.25 A

DUAL

R-PDSO-G3

1

e3

30

260

8.7 pF

DMP6180SK3Q-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.11 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

45.5 pF

AEC-Q101

ZVNL110ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

4.5 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

BSS84V-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.13 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

12 pF

DMN2041L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.78 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.4 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.028 ohm

6.4 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

260

DMP3098LDM-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

ZVN3310A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

30

260

5 pF

ZXMS6006DT8TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.13 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.125 ohm

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

e3

30

260

2N7002H-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

7.5 ohm

.17 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMN65D8LFB-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.84 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

4 ohm

.26 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

ZXMHC10A07T8TA

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.7 ohm

1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

BS170FTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.15 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVNL110A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.7 W

PLASTIC/EPOXY

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.32 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.32 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

e3

30

260

8 pF

DMN2004VK-7B

Diodes Incorporated

MATTE TIN

1

e3

30

260

DMN53D0U-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Matte Tin (Sn)

3 ohm

.3 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZVN4210A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.45 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

.45 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

30

260

12 pF

ZXMN3F30FHTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.047 ohm

3.8 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2N7002V-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.28 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

13.5 ohm

.28 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

5 pF

BSS138DWK-7

Diodes Incorporated

MATTE TIN

e3

DMN2004VK-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

e3

30

260

20 pF

DMN30H4D0LFDE-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

DMP4013LFGQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.013 ohm

10.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

ZXM64P03XTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.075 ohm

3.8 A

DUAL

S-PDSO-G8

1

Not Qualified

LOW THRESHOLD

MO-187AA

e3

260

DMN2990UDJ-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.45 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.99 ohm

.33 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.