Diodes Incorporated - DMN26D0UFB4-7

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DMN26D0UFB4-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN26D0UFB4-7
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: 3 ohm;
Datasheet DMN26D0UFB4-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .24 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 3 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): .23 A
Peak Reflow Temperature (C): 260
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