Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

IRF7811AV

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.014 ohm

10.8 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e0

IRHLUB770Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

.8 A

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

IPN70R2K1CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

2.1 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

IRF8734PBF

Infineon Technologies

168 A

216 mJ

21 A

FET General Purpose Power

1

Not Qualified

IRHLUC7630Z4

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.35 ohm

.89 A

DUAL

R-XDSO-N6

Not Qualified

CMOS COMPATIBLE

e0

BSS126H6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.021 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

500 ohm

.021 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

1.5 pF

IRHLF7970Z4SCV

Infineon Technologies

IPC302N20N3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

BSS159NH6906

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

.23 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

5.9 pF

BSL302SNL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 ohm

7.1 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

260

43 pF

BSS205NH6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

2.5 A

DUAL

R-PDSO-G3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

24 pF

IRF7805ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0068 ohm

16 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

BSS119L6433HTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

6 ohm

.17 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

4.1 pF

IRHLUBC7970Z4

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.57 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.53 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.4 ohm

.53 A

DUAL

R-XDSO-N3

e0

RH - 100K Rad(Si)

IRF7821PBF

Infineon Technologies

100 A

44 mJ

13.6 A

FET General Purpose Power

Matte Tin (Sn)

1

Not Qualified

e3

30

260

BSS159H6906

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

.23 A

DUAL

R-PDSO-G3

5.9 pF

AEC-Q101

IRHLF640Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-39

NOT SPECIFIED

NOT SPECIFIED

IRHLF730Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

CMOS COMPATIBLE

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

BSR316P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.8 ohm

.00036 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

20 pF

AEC-Q101

IRHLUBC730Z4SCS

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

BSS101

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.63 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.13 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

16 ohm

.13 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

5 pF

BSD314SPEL6327HTSA1

Infineon Technologies

IRLML6302GPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.78 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.54 W

150 Cel

SILICON

-55 Cel

.6 ohm

.78 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

28 pF

BSS214NW

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

AEC-Q101

AUIRFL024NTR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.075 ohm

.0028 A

DUAL

R-PDSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

TO-261AA

e3

30

260

IPC300N20N3X1SA2

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRHLG77110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

1.8 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

MIL-19500; RH - 100K Rad(Si)

IRHLF640Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

NOT SPECIFIED

NOT SPECIFIED

BSS123IXTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

6 ohm

.19 A

DUAL

R-PDSO-G3

1

1.6 pF

IRHLUC7670Z4SCS-01

Infineon Technologies

BSS139IXTMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRHLUC730Z4SCS

Infineon Technologies

BSS169IXTMA1

Infineon Technologies

BSS127IXTMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRHLUC7670Z4SCV

Infineon Technologies

BSP135IXTMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.