Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SN7002

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.19 A

DUAL

R-PDSO-G3

Not Qualified

e3

BSS297E6325

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3.3 ohm

.48 A

BOTTOM

O-PBCY-W3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

30 pF

IRF7910TRPBF-1

Infineon Technologies

N-CHANNEL

YES

2 W

2

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 A

1

MS-012AA

BSS119H6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

e3

4.1 pF

AEC-Q101

SN7002NL6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

4.2 pF

IPN70R1K5CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.5 ohm

5.4 A

DUAL

R-PDSO-G3

1

DRAIN

e3

BSS124

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

400 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

28 ohm

.12 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

6 pF

IRHLUB780Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

.8 A

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

BSS296E6296

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

1.4 ohm

.8 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

45 pF

IRF7241

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.041 ohm

6.2 A

DUAL

R-PDSO-G8

1

ULTRA LOW RESISTANCE

MS-012AA

IPN70R2K0P7S

Infineon Technologies

TIN

1

e3

IPN60R3K4CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

3.4 ohm

2.6 A

DUAL

R-PDSO-G3

1

DRAIN

e3

IRHLG7970Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.25 ohm

.71 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRF7811AVTRPBF-1

Infineon Technologies

1

BSS127

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.021 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

600 ohm

.021 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

1.5 pF

BSS159N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.5 ohm

.23 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

5.9 pF

BSS169I

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRF7478PBF-1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.5 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

1

IRHLUC7930Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.65 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.6 ohm

.65 A

DUAL

R-XDSO-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRF7331TRPBF-1

Infineon Technologies

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

1

IRHLUC770Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

.89 A

DUAL

R-XDSO-N6

1

Not Qualified

JANSF2N7626UBCN

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.53 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.4 ohm

.53 A

DUAL

R-XDSO-N3

ISOLATED

Qualified

e0

MIL-19500; RH - 300K Rad(Si)

IRHLG770Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

BSS214NL6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.14 ohm

1.5 A

DUAL

R-PDSO-G3

AVALANCHE RATED

AEC-Q101

IRLL2705PBF

Infineon Technologies

30 A

110 mJ

5.2 A

FET General Purpose Power

Matte Tin (Sn)

1

Not Qualified

e3

30

260

BSS806NL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

ENHANCEMENT MODE

1

2.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.057 ohm

2.3 A

DUAL

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

29 pF

BSS806NL6327HTSA1

Infineon Technologies

BSS119NH6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

e3

3.1 pF

AEC-Q101

IPN80R750P7

Infineon Technologies

TIN

1

e3

IRHLA7670Z4

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.8 A

DUAL

R-XDSO-F14

Not Qualified

e0

IPC302N08N3X2SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

IPN80R600P7ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.6 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

BSD816SNL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.16 ohm

1.4 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED

e3

260

10 pF

BSS214N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

.14 ohm

1.5 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

AEC-Q101

IRHLF7930Z4SCS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

1.35 ohm

1.5 A

BOTTOM

O-MBCY-W3

TO-205AF

RH - 300K Rad(Si)

IPC302NE7N3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

FF23MR12W1M1_B11

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRFL5505

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.11 ohm

2.5 A

SINGLE

R-PSSO-G3

DRAIN

TO-261AA

IPC302N08N3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

BSS192PL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

12 ohm

.19 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

8 pF

AEC-Q101

BSS138WE6433XT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

3.5 ohm

.28 A

DUAL

R-PDSO-G3

4.2 pF

IRHLF770Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

CMOS COMPATIBLE

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

BSS192E6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

20 ohm

.15 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

15 pF

IRF7329

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.017 ohm

9.2 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

IRLML2803GPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

1.2 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

TO-236AB

e3

30

260

IPN70R600P7SATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.6 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

IPN70R900P7SATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.9 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

BSS295

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1.4 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

1.4 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

75 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.