Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

JANS2N6851U

Infineon Technologies

P-CHANNEL

SINGLE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4 A

QUAD

R-CQCC-N15

Qualified

e0

MIL-19500/564F

IRF7750GPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

4.7 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

IRF7820PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.7 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

IRLHS6376TR2PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

6.6 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

3.4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.082 ohm

3.6 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

IRF7465TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.28 ohm

1.9 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012AA

e3

IRHLF780Z4SCS

Infineon Technologies

BSS315P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.15 ohm

1.5 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

84 pF

AEC-Q101

BSR315PL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.62 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

.62 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

30 pF

IPN60R600P7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.6 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

IPC302N15N3X7SA1

Infineon Technologies

BSS129

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

10 pF

BSS192PH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

12 ohm

.19 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

8 pF

AEC-Q101

BSS209PWL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.52 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.58 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

.58 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e3

260

IRLHS6276TR2PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

6.6 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

3.4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.062 ohm

4.5 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

IRF7831PBF

Infineon Technologies

170 A

100 mJ

MATTE TIN

1

e3

30

260

BSS87L6327HTSA1

Infineon Technologies

BSS138NL6433XT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.36 W

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.23 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

3.8 pF

AEC-Q101; IEC-61249-2-21

BSL306NL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED

e3

260

17 pF

BSS214NWL6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

BSS149

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

.35 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

20 pF

IPN70R2K1CEATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

2.1 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

SN7000E6288

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

25 pF

IRFH8321TR

Infineon Technologies

BSS138W-H6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.28 A

DUAL

R-PDSO-G3

1

e3

30

260

4.2 pF

BSS138WGL6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.28 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

4.2 pF

2N7002DWL6327HTSA1

Infineon Technologies

BSL308CH6327

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

17 pF

AEC-Q101

BSS135E-6288

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

60 ohm

.08 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSL314PEL6327

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

1.5 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

260

11 pF

BSL308CL6327HTSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.057 ohm

2.3 A

DUAL

R-PDSO-G6

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

17 pF

AEC-Q101

IRHLUBC770Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.68 ohm

.8 A

DUAL

R-XDSO-N3

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

BSO119N03S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.56 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0119 ohm

9 A

DUAL

R-PDSO-G8

3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MS-012AA

e3

260

93 pF

BSS159NH6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

.23 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

5.9 pF

BSP192E-6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.15 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

IRF7457PBF

Infineon Technologies

120 A

265 mJ

15 A

FET General Purpose Power

1

Not Qualified

BSS84PW

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8 ohm

.15 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

3.8 pF

BSS138W-E6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

3.5 ohm

.28 A

DUAL

R-PDSO-G3

1

260

4.2 pF

BSD816SN

Infineon Technologies

TIN

1

e3

IRF7478TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

140 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.026 ohm

7 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012AA

e3

37 pF

BSS110E6296

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.17 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

12 pF

IRHLF680Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-39

NOT SPECIFIED

NOT SPECIFIED

BSS138WL6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.28 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

4.2 pF

IRF9393PBF

Infineon Technologies

75 A

100 mJ

9.2 A

Other Transistors

1

Not Qualified

IPN80R1K4P7

Infineon Technologies

TIN

1

e3

BSS119L6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

4.1 pF

IRHLUBCN770Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.68 ohm

.8 A

DUAL

R-XDSO-N3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

BSL306NH6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

.057 ohm

2.3 A

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

17 pF

AEC-Q101

BSS225H6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

45 ohm

.09 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

e3

4.4 pF

AEC-Q101

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.