Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

IPN50R650CE

Infineon Technologies

150 Cel

-40 Cel

TIN

1

e3

BSP87E-6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.29 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

BSS7728NL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

4.4 pF

IRHG9110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

.75 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRF5810PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.09 ohm

2.9 A

DUAL

R-PDSO-G6

2

Not Qualified

ULTRA LOW RESISTANCE

e3

30

260

BSL802SNL6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.022 ohm

7.5 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

77 pF

BSL202SNL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.022 ohm

7.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

260

60 pF

BSD214SNL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

1.5 A

DUAL

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

9 pF

BSO083N03MSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0083 ohm

9.8 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

40

260

2N7614M1

Infineon Technologies

Not Qualified

BSS98

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.63 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

8 pF

BSO300N03SFUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 ohm

5.7 A

DUAL

R-PDSO-G8

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MS-012AA

34 pF

BSL215PL6327

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.15 ohm

1.5 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED

e3

260

128 pF

BSZ0908NDXTMA1

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.025 ohm

19 A

DUAL

S-PDSO-N8

DRAIN SOURCE

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

2N7628M1

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

.71 A

DUAL

R-CDIP-T14

1

Not Qualified

MO-036AB

FS820R08A6P2LB

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRF3415-002

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

ISS55EP06LM

Infineon Technologies

TIN

1

e3

BSL215CL6327HTSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

1.5 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

9 pF

IPN50R3K0CE

Infineon Technologies

TIN

1

e3

JANHCA2N6794

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 W

UNSPECIFIED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/555H

BSC0921NDI

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.007 ohm

11 A

DUAL

R-PDSO-N8

1

DRAIN SOURCE

e3

IPN95R1K2P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

950 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.2 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

IPC218N04N3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

IPC218N06L3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

IPN60R1K0CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1 ohm

6.8 A

DUAL

R-PDSO-G3

1

DRAIN

e3

BSS192PL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

12 ohm

.19 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

8 pF

AEC-Q101

BSS306NL6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.057 ohm

2.3 A

DUAL

R-PDSO-G3

AVALANCHE RATED

17 pF

AEC-Q101

IPC302N12N3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

120 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

IRF7807VPBF-1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.5 W

1

8.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.3 A

1

IRLL024Z

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.1 ohm

5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

HIGH RELIABILITY

TO-261AA

e0

IRHLF670Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-39

NOT SPECIFIED

NOT SPECIFIED

BSD314SPEH6327

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

BSS296E-6288

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

.8 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSD316SNL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

ENHANCEMENT MODE

1

1.4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.16 ohm

1.4 A

DUAL

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

7 pF

IRF7910TRPBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.015 ohm

10 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

IRHLUB7930Z4SCS

Infineon Technologies

BSS149E6325

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

20 pF

BSS127I

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

BSS340NWH6327XTSA1

Infineon Technologies

TIN

1

e3

IPC302N12N3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

120 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

BSR315P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.8 ohm

.62 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

30 pF

AEC-Q101

IRF8852PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7.8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0113 ohm

7.8 A

DUAL

R-PDSO-G8

1

ULTRA LOW RESISTANCE

MO-153AA

IRFL024NTR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.075 ohm

2.8 A

SINGLE

R-PSSO-G3

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

NOT SPECIFIED

NOT SPECIFIED

BSS126

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.021 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

500 ohm

.021 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

1.5 pF

IRF7469PBF

Infineon Technologies

73 A

210 mJ

9 A

FET General Purpose Power

Matte Tin (Sn)

1

Not Qualified

e3

30

260

IRHLUBC7970Z4S

Infineon Technologies

BSS138I

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.36 W

150 Cel

SILICON

-55 Cel

3.5 ohm

.23 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

2.8 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.