Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
20 W |
UNSPECIFIED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
3 |
UNCASED CHIP |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
6 A |
UPPER |
R-XUUC-N3 |
DRAIN |
Qualified |
e0 |
MIL-19500/555H |
|||||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
1 |
|||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
2.5 A |
UPPER |
R-XUUC-N3 |
DRAIN |
Qualified |
e0 |
MIL-19500/563F |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.14 ohm |
1.5 A |
DUAL |
R-PDSO-G6 |
1 |
AVALANCHE RATED |
e3 |
9 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.013 ohm |
8.5 A |
DUAL |
S-PDSO-N8 |
DRAIN SOURCE |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
3.5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
LOGIC LEVEL COMPATIBLE |
3.8 pF |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN OVER NICKEL |
.042 ohm |
37 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
YES |
.6 W |
UNSPECIFIED |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
.8 A |
14 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.6 ohm |
.8 A |
DUAL |
R-XDSO-F14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.1 ohm |
UNSPECIFIED |
R-XXUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0091 ohm |
10 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
MS-012AA |
e3 |
260 |
120 pF |
||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE |
YES |
25 W |
UNSPECIFIED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
UNCASED CHIP |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 A |
UPPER |
R-XUUC-N3 |
1 |
DRAIN |
Qualified |
MIL-19500/564F |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN OVER NICKEL |
.042 ohm |
37 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.15 ohm |
1.5 A |
DUAL |
R-PDSO-G6 |
AVALANCHE RATED |
e3 |
128 pF |
AEC-Q101 |
||||||||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.022 ohm |
7.5 A |
DUAL |
R-PDSO-G6 |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
77 pF |
AEC-Q101 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
1 |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
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|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.07 ohm |
2.1 A |
DUAL |
R-PDSO-G6 |
AVALANCHE RATED |
e3 |
24 pF |
AEC-Q101 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0065 ohm |
11 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0065 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
TO-263AB |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0052 ohm |
14 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
MS-012AA |
e3 |
260 |
280 pF |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7.5 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.022 ohm |
7.5 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
220 |
77 pF |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
1.4 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
.96 A |
14 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.98 ohm |
.96 A |
DUAL |
R-CDIP-T14 |
Not Qualified |
MO-036AB |
e0 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.02 ohm |
7 A |
DUAL |
R-PDSO-G8 |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
MS-012AA |
46 pF |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.05 ohm |
2.5 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
24 pF |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
.02 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
9 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
UPPER |
R-XUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
56 pF |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.07 ohm |
2.1 A |
DUAL |
R-PDSO-G6 |
1 |
AVALANCHE RATED |
e3 |
24 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.004 ohm |
14 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0068 ohm |
12 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
MS-012AA |
e3 |
260 |
160 pF |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.022 ohm |
6.1 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.035 ohm |
5 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
MS-012AA |
e3 |
260 |
28 pF |
||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE |
YES |
25 W |
UNSPECIFIED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
UNCASED CHIP |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
4 A |
UPPER |
R-XUUC-N3 |
DRAIN |
Qualified |
e0 |
MIL-19500/564F |
|||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE |
NO |
25 W |
METAL |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
4 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
4 A |
BOTTOM |
O-MBCY-W3 |
DRAIN |
Qualified |
TO-205AF |
e0 |
MIL-19500/630C |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.56 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.02 ohm |
7 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
MS-012AA |
e3 |
260 |
46 pF |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 4 ELEMENTS |
NO |
1.4 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
1 A |
14 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.7 ohm |
1 A |
DUAL |
R-CDIP-T14 |
Not Qualified |
MO-036AB |
e0 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 W |
UNSPECIFIED |
SWITCHING |
500 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
3 |
UNCASED CHIP |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
2.5 A |
UPPER |
R-XUUC-N3 |
DRAIN |
Qualified |
e0 |
MIL-19500/557G |
|||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.175 ohm |
1.5 A |
DUAL |
R-PDSO-G6 |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
15 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
4 A |
BOTTOM |
R-CBCC-N15 |
Qualified |
e0 |
MIL-19500/630C |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
.36 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
5 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
LOGIC LEVEL COMPATIBLE |
4.4 pF |
||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.39 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
1.2 ohm |
.39 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
AVALANCHE RATED |
e3 |
260 |
22 pF |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.1 ohm |
UNSPECIFIED |
R-XXUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0065 ohm |
11 A |
DUAL |
R-PDSO-G8 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.5 ohm |
.15 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
8 pF |
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|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.3 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.057 ohm |
2.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
260 |
28.6 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.