Infineon Technologies - JANTXVF2N7390

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JANTXVF2N7390 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVF2N7390
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (ID): 4 A; JESD-30 Code: O-MBCY-W3;
Datasheet JANTXVF2N7390 Datasheet
In Stock369
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
JEDEC-95 Code: TO-205AF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Reference Standard: MIL-19500/630C
Maximum Drain Current (Abs) (ID): 4 A
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