Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SISC3.2N10E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

UPPER

R-XUUC-N2

Not Qualified

SP000870644

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

6 ohm

.00019 A

DUAL

R-PDSO-G3

AVALANCHE RATED

3.1 pF

AEC-Q101

SP000934758

Infineon Technologies

SP000843010

Infineon Technologies

SP000840426

Infineon Technologies

SISC0.5P06E

Infineon Technologies

P-CHANNEL

SINGLE

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

UPPER

R-XUUC-N2

Not Qualified

SP0610T

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 ohm

.13 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

12 pF

SP000702610

Infineon Technologies

SP001101032

Infineon Technologies

SP001047642

Infineon Technologies

SP000702620

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

14 ohm

.11 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

4.2 pF

AEC-Q101

SISC1.4N24D

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

240 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

UPPER

R-XUUC-N2

Not Qualified

SIPC14E06

Infineon Technologies

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

UPPER

R-XUUC-N4

Not Qualified

SP000934750

Infineon Technologies

SP000917564

Infineon Technologies

SP000924084

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

8 ohm

.17 A

DUAL

R-PDSO-G3

AVALANCHE RATED

3 pF

AEC-Q101

SPNX6N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.85 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

.85 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

AVALANCHE RATED

SP001551996

Infineon Technologies

SISC0.5N10E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

UPPER

R-XUUC-N2

Not Qualified

SP001572964

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.54 W

150 Cel

SILICON

-55 Cel

.25 ohm

1.2 A

DUAL

R-PDSO-G3

TO-236AB

15 pF

SP001101034

Infineon Technologies

SISC3.2P20E

Infineon Technologies

P-CHANNEL

SINGLE

YES

UNSPECIFIED

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

UPPER

R-XUUC-N2

Not Qualified

SP001195034

Infineon Technologies

SP000928942

Infineon Technologies

SP000917656

Infineon Technologies

SIPC14D06

Infineon Technologies

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

UPPER

R-XUUC-N4

Not Qualified

SIPC42S2N08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

227 A

5

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0042 ohm

227 A

UPPER

R-XUUC-N5

Not Qualified

AVALANCHE RATED

e3

IRFD010

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

1.7 A

DUAL

R-PDIP-T4

e0

SP001552710

Infineon Technologies

SP001058824

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.3 ohm

1.9 A

DUAL

R-PDSO-G4

DRAIN

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

55 pF

AEC-Q101

SPN02N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.5 ohm

.4 A

DUAL

R-PDSO-G4

3

Not Qualified

e3

260

SP000447478

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.022 ohm

5.8 A

DUAL

R-PDSO-G8

SISC0.5N06E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

UPPER

R-XUUC-N2

Not Qualified

SP001101038

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

11 ohm

.14 A

DUAL

R-PDSO-G3

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

8 pF

AEC-Q101

IRFD012

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

4

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

1.4 A

DUAL

R-PDIP-T4

e0

SP000928946

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.15 ohm

1.5 A

DUAL

R-PDSO-G3

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

84 pF

AEC-Q101

SIPC21A05

Infineon Technologies

YES

UNSPECIFIED

45 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

UPPER

R-XUUC-N5

Not Qualified

SP001059328

Infineon Technologies

SP001564802

Infineon Technologies

SP000702572

Infineon Technologies

SP001574060

Infineon Technologies

SISC3.2N05E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

UPPER

R-XUUC-N2

Not Qualified

SP000924068

Infineon Technologies

SP000928938

Infineon Technologies

SP001049344

Infineon Technologies

SP000750498

Infineon Technologies

IRFD015

Infineon Technologies

N-CHANNEL

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

1.4 A

DUAL

R-PDIP-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SP000476912

Infineon Technologies

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.