Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SISC1.4N60D

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

600 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

60 ohm

UPPER

R-XUUC-N2

Not Qualified

SP001047646

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

6 ohm

.26 A

SINGLE

R-PSSO-F3

DRAIN

7.3 pF

AEC-Q101

SIPC14F06

Infineon Technologies

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

UPPER

R-XUUC-N4

Not Qualified

IRFD213

Infineon Technologies

N-CHANNEL

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.4 ohm

.45 A

DUAL

R-PDIP-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SP001058784

Infineon Technologies

SIPC14G06

Infineon Technologies

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

UPPER

R-XUUC-N4

Not Qualified

SIPCXXB06

Infineon Technologies

YES

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.25 ohm

UPPER

R-XUUC-N5

Not Qualified

SIPC21C05

Infineon Technologies

YES

UNSPECIFIED

45 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

UPPER

R-XUUC-N5

Not Qualified

IRFD025

Infineon Technologies

N-CHANNEL

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

2.2 A

DUAL

R-PDIP-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SP000919334

Infineon Technologies

SP001577684

Infineon Technologies

SPN01N50M2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.33 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.33 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

SP001434888

Infineon Technologies

SISC0.5N65E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

65 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

UPPER

R-XUUC-N2

Not Qualified

SP000917572

Infineon Technologies

SISC0.5P05E

Infineon Technologies

P-CHANNEL

SINGLE

YES

UNSPECIFIED

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

UPPER

R-XUUC-N2

Not Qualified

SP000917654

Infineon Technologies

SISC1.4P24E

Infineon Technologies

P-CHANNEL

SINGLE

YES

UNSPECIFIED

240 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

UPPER

R-XUUC-N2

Not Qualified

SP0610TE6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

10 ohm

.13 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

12 pF

SP000919330

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

3.5 ohm

.23 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

3.8 pF

AEC-Q101

SP000919328

Infineon Technologies

SISC0.6N25D

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

250 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

100 ohm

UPPER

R-XUUC-N2

Not Qualified

SISC3.2P05E

Infineon Technologies

P-CHANNEL

SINGLE

YES

UNSPECIFIED

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

1 ohm

UPPER

R-XUUC-N2

Not Qualified

IRFD9213

Infineon Technologies

P-CHANNEL

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4.5 ohm

.3 A

DUAL

R-PDIP-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SISC0.6N24E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

240 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

28 ohm

UPPER

R-XUUC-N2

Not Qualified

SP001059326

Infineon Technologies

SP0610LE-6288

Infineon Technologies

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.18 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

SP001564078

Infineon Technologies

SP001570444

Infineon Technologies

SP000928936

Infineon Technologies

BSZ0908ND

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.025 ohm

19 A

DUAL

S-PDSO-N8

DRAIN SOURCE

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

BSD235NH6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.35 ohm

.95 A

DUAL

R-PDSO-G6

AVALANCHE RATED

AEC-Q101

BSS7728

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

5 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

4.4 pF

IPB80N06S3-07

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0065 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

245

JANTXVR2N7389

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

6.5 A

BOTTOM

O-MBCY-W3

DRAIN

Qualified

TO-205AF

MIL-19500; RH - 100K Rad(Si)

IRF6216TR

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

19 A

200 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.24 ohm

2.2 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012AA

e3

IPC26N10NR

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRHG3110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

ISP12DP06NM

Infineon Technologies

TIN

1

e3

BSL806NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

28.6 pF

AEC-Q101

BSL215CH6327

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

.14 ohm

1.5 A

DUAL

R-PDSO-G6

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

9 pF

AEC-Q101

BSS92E6288

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

BSZ0907NDXTMA2

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

NO LEAD

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

8.5 A

DUAL

S-PDSO-N8

DRAIN SOURCE

AVALANCHE RATED

JANTXVF2N7389U

Infineon Technologies

P-CHANNEL

SINGLE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

6.5 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6.5 A

BOTTOM

R-CBCC-N15

Qualified

e0

MIL-19500/630C

IPI80N06S307AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0068 ohm

80 A

SINGLE

R-PSIP-T3

AVALANCHE RATED

TO-262AA

BSO064N03SFUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0064 ohm

12 A

DUAL

R-PDSO-G8

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

MS-012AA

180 pF

IRHG7110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

RADIATION HARDENED

MO-036AB

e0

BSD235NL6327HTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.35 ohm

.95 A

DUAL

R-PDSO-G6

AVALANCHE RATED

AEC-Q101

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.