Infineon Technologies Small Signal Field Effect Transistors (FET) 1,188

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSL316CH6327

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.16 ohm

1.4 A

DUAL

R-PDSO-G6

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

7 pF

AEC-Q101

IRHLUC7670Z4SCS

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

.89 A

DUAL

R-XDSO-N6

CMOS COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

IPN70R750P7SATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.75 ohm

DUAL

R-PDSO-G3

1

DRAIN

e3

IRF7751GPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

4.5 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MO-153AA

e3

BSS314PE

Infineon Technologies

TIN

1

e3

260

BSO104N03S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.56 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0097 ohm

10 A

DUAL

R-PDSO-G8

3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MS-012AA

e3

260

110 pF

IRHLF780Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

SN7002W

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.23 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

4.5 pF

IRHLF730Z4SCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.6 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-205AF

RH - 300K Rad(Si)

IRF7805ZPBF-1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.5 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

1

IRHLA7970Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.56 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.36 ohm

.56 A

DUAL

R-XDSO-F14

Not Qualified

e0

BSL308C

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

17 pF

AEC-Q101

BSR315PL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

.62 A

DUAL

R-PDSO-G3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

30 pF

BSS125E6288

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

45 ohm

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

6 pF

BSS223PWL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

.39 A

DUAL

R-PDSO-G3

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

22 pF

AEC-Q101

BSS215PL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

1.5 A

DUAL

R-PDSO-G3

AVALANCHE RATED

128 pF

AEC-Q101

IRLML5203TRPBF-1

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

IPC313N10N3R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

BSS125

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

45 ohm

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

6 pF

BSS315PL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

1.5 A

DUAL

R-PDSO-G3

AVALANCHE RATED

84 pF

AEC-Q101

BSS145

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

PLASTIC/EPOXY

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

.22 A

DUAL

R-PDSO-G3

Not Qualified

e0

BSO150N03FUMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

7.6 A

DUAL

R-PDSO-G8

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MS-012AA

100 pF

BSS139I

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRHLF7970Z4PBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

1.5 A

BOTTOM

O-MBCY-W3

CMOS COMPATIBLE

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

IPN70R900P7S

Infineon Technologies

-40 Cel

TIN

1

e3

IPN70R1K2P7S

Infineon Technologies

TIN

1

e3

BSS297

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

.48 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.3 ohm

.48 A

BOTTOM

O-PBCY-W3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

30 pF

IPN60R1K5CE

Infineon Technologies

TIN

1

e3

BSR315PH6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.8 ohm

.62 A

DUAL

R-PDSO-G3

AVALANCHE RATED

e3

30 pF

AEC-Q101

IPC313N10N3RX7SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

BSS214NL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED

e3

260

IPN80R3K3P7

Infineon Technologies

TIN

1

e3

IRF7509PBF-1

Infineon Technologies

1

BSS214NWL6327HTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

1.5 A

DUAL

R-PDSO-G3

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

IRFL024N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.075 ohm

2.8 A

SINGLE

R-PSSO-G3

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e0

BSS119N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

e3

3.1 pF

AEC-Q101

BSL315PL6327HTSA1

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

1.5 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

84 pF

IPN80R2K0P7

Infineon Technologies

TIN

1

e3

BSS209PWL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.55 ohm

.63 A

DUAL

R-PDSO-G3

AVALANCHE RATED

45 pF

AEC-Q101

BSL373SNH6327

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

BSS225

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.09 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

45 ohm

.09 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

4.4 pF

IRF7331PBF-1

Infineon Technologies

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

1

SN7000E6296

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

25 pF

IPC302N15N3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

UNSPECIFIED

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

IPN70R600P7S

Infineon Technologies

TIN

1

e3

BSS192P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

12 ohm

.19 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

8 pF

AEC-Q101

IRF7331

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-PDSO-G8

1

MS-012AA

IRHLF780Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

1.6 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.