BSS215PL6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSS215PL6327HTSA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .15 ohm; Operating Mode: ENHANCEMENT MODE;
Datasheet	BSS215PL6327HTSA1 Datasheet
In Stock	1,893

NAME	DESCRIPTION
Other Names:	BSS215P L6327 BSS215P L6327DKR-ND BSS215P L6327DKR BSS215PL6327HTSA1DKR BSS215P L6327TR BSS215P L6327TR-ND BSS215PL6327HTSA1TR BSS215P L6327CT-ND BSS215P L6327CT SP000442446 BSS215P L6327-ND BSS215PL6327 BSS215PL6327HTSA1CT
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	128 pF
Maximum Drain Current (ID):	1.5 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	.15 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,893	-	-

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