Infineon Technologies - BSS806NL6327

  1. Home
  2. Infineon Technologies - BSS806NL6327
BSS806NL6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSS806NL6327
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (ID): 2.3 A; Package Body Material: PLASTIC/EPOXY;
Datasheet BSS806NL6327 Datasheet
In Stock826
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
No. of Elements: 1
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .057 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 29 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 2.3 A
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
826 - -

Popular Products

Category Top Products

FDC640P by Onsemi

FDC640P

Onsemi

The Onsemi FDC640P is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.053 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
2N7002CK,215 by Nexperia

2N7002CK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.6 ohm; Maximum Feedback Capacitance (Crss): 7.5 pF; Minimum DS Breakdown Voltage: 60 V;
NDS0605 by Rochester Electronics

NDS0605

Rochester Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
T2N7002BK,LM(T by Toshiba

T2N7002BK,LM(T

Toshiba

T2N7002BK,LM(T by Toshiba is a N-CHANNEL FET with 60V DS breakdown voltage and 0.4A ID. Ideal for switching applications, it features a built-in diode and resistor in a small outline package. Operating in enhancement mode, it has 1W power dissipation and 1.75 ohm max on-resistance.
NTR1P02T1G by Onsemi

NTR1P02T1G

Onsemi

NTR1P02T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.18 ohm RDS(on), and 1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals. Operating up to 150°C, it's designed for high-performance electronic systems.
BSS139H6327XTSA1 by Infineon Technologies

BSS139H6327XTSA1

Infineon Technologies

Infineon's BSS139H6327XTSA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 30 ohm RDS(on), and 3.3pF Crss. Ideal for depletion mode applications, it features a built-in diode and GULL WING terminals in a small outline package.
FDN339AN by Fairchild Semiconductor

FDN339AN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .035 ohm; Terminal Form: GULL WING;
FDMC8030 by Fairchild Semiconductor

FDMC8030

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Position: DUAL; JESD-609 Code: e4;
2N7002T by Jiangsu Changjiang Electronics Technology

2N7002T

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
2N7000 by Nte Electronics

2N7000

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
2N7000G by Onsemi

2N7000G

Onsemi

2N7000G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Widely used in enhancement mode, it has a max power dissipation of 0.35W. Ideal for applications requiring small signal amplification and switching functions.
MMBF170Q-7-F by Diodes Incorporated

MMBF170Q-7-F

Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
FDY3000NZ by Onsemi

FDY3000NZ

Onsemi

FDY3000NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.6A, on-resistance of 0.7 ohm, and operates at up to 150°C. With a small outline package style and matte tin finish, it offers reliable performance in various electronic devices.
FDC6327C by Fairchild Semiconductor

FDC6327C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; JESD-30 Code: R-PDSO-G6; Maximum Drain Current (ID): 2.7 A;
NTJD4401NT1G by Onsemi

NTJD4401NT1G

Onsemi

NTJD4401NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. With a max drain current of 0.63A and on resistance of 0.375 ohm, it's ideal for small outline packages in high-temp environments up to 150°C.
SI2308BDS-T1-E3 by Vishay Intertechnology

SI2308BDS-T1-E3

Vishay Intertechnology

SI2308BDS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 2.3A Drain Current, and 0.156 ohm On Resistance. With an Operating Temperature range of -55 to 150 °C, it is ideal for small outline surface mount designs requiring high power dissipation.
2N7000-G by Comchip Technology

2N7000-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;
FDMC8030 by Onsemi

FDMC8030

Onsemi

FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
BC548B by North American Philips Discrete Products Div

BC548B

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
2N7002BKVL by Nexperia

2N7002BKVL

Nexperia

2N7002BKVL by Nexperia is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications in ENHANCEMENT MODE. Features include 0.35A Drain Current, 1.6 ohm On Resistance, and -55 to 150 °C Operating Temperature range.