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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSS119L6433HTMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel; |
| Datasheet | BSS119L6433HTMA1 Datasheet |
| In Stock | 2,711 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
BSS119 L6433-ND SP000247291 BSS119 L6433DKR-ND BSS119 L6433 BSS119 L6433CT-ND BSS119 L6433DKR BSS119L6433HTMA1TR BSS119L6433HTMA1DKR BSS119 L6433TR-ND BSS119 L6433CT BSS119L6433 BSS119L6433HTMA1CT |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 4.1 pF |
| Maximum Drain Current (ID): | .17 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 100 V |
| Maximum Power Dissipation (Abs): | .36 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 6 ohm |









