NXP Semiconductors Small Signal Field Effect Transistors (FET) 1,505

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PMBF4391TRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

30 ohm

.012 A

DUAL

R-PDSO-G3

Not Qualified

3.5 pF

J113-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PMBFJ111-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

30 ohm

DUAL

R-PDSO-G3

Not Qualified

BSR57TRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

40 ohm

.01 A

DUAL

R-PDSO-G3

Not Qualified

e3

5 pF

BSH205

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.417 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.5 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

PMBFJ210TRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

PMV160UP

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.21 ohm

1.2 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

PMBFJ111-T

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

30 ohm

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

PMBFJ176-TAPE-7

NXP Semiconductors

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

250 ohm

DUAL

R-PDSO-G3

Not Qualified

PMBF4391-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

30 ohm

DUAL

R-PDSO-G3

Not Qualified

3.5 pF

PMV28UN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.032 ohm

3.3 A

DUAL

R-PDSO-G3

1

LOW THRESHOLD

TO-236AB

e3

PMBF4416ATRL13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

35 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G3

Not Qualified

BSR56T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

25 ohm

.02 A

DUAL

R-PDSO-G3

Not Qualified

e3

260

5 pF

BSN254AAMO

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

BFR31-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

.01 A

DUAL

R-PDSO-G3

Not Qualified

1.5 pF

BSS84-TAPE-13

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 ohm

.13 A

DUAL

R-PDSO-G3

Not Qualified

12 pF

BF1205C

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.18 W

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

PMV65ENEA

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.075 ohm

2.7 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMDXB600UNE

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.62 ohm

.6 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

BSH207115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

2 A

DUAL

R-PDSO-G6

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

BSH206

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.417 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

.75 A

DUAL

R-PDSO-G6

Not Qualified

LOGIC LEVEL COMPATIBLE

BSP145TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.25 A

DUAL

R-PDSO-G4

Not Qualified

PMV65UN,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.17 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.076 ohm

2 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

BSP110TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

7 ohm

.325 A

DUAL

R-PDSO-G4

1

Not Qualified

e3

PMGD8000LN,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.125 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8 ohm

.125 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

BSP122T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

.55 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PMBFJ210

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

PMBF107T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

10 pF

PMBFJ211TRL13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

BF861B-T

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

TO-236AB

2.7 pF

BSS89T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

6 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSN20W

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.08 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ohm

.08 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

5 pF

PMN45EN,165

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.04 ohm

5.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

BSH108TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.14 ohm

1.9 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

BSR57-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

40 ohm

DUAL

R-PDSO-G3

Not Qualified

5 pF

PMBFJ176,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

250 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

NX3008PBKV

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4.1 ohm

.22 A

DUAL

R-PDSO-F6

1

Not Qualified

LOW THRESHOLD

e3

BSH112/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

5 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

10 pF

BS107A-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6.4 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSN20W135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.08 A

DUAL

R-PDSO-G3

Not Qualified

5 pF

BSH101

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.7 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.81 ohm

.7 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

BSH107115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

2.5 A

DUAL

R-PDSO-G6

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

BSS87135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.28 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

10 pF

BSR58TRL13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

60 ohm

.005 A

DUAL

R-PDSO-G3

Not Qualified

e3

5 pF

PMBFJ110,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

18 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

15 pF

BSH108

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.14 ohm

1.9 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

PMDPB70XPE

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.21 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.079 ohm

3 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

BSR58TRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

60 ohm

.005 A

DUAL

R-PDSO-G3

Not Qualified

e3

5 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.