Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.095 ohm |
2.3 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
80 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.55 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.89 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.35 ohm |
.75 A |
DUAL |
R-PDSO-F3 |
1 |
e3 |
30 |
260 |
15 pF |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
3.5 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236 |
e0 |
5 pF |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.055 ohm |
3.2 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.0043 ohm |
18 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e4 |
30 |
260 |
180 pF |
|||||||||||||||||||
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3.3 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.14 ohm |
3.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0048 ohm |
12.7 A |
DUAL |
R-PDSO-F5 |
DRAIN |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
59 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
46 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.009 ohm |
8.3 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.05 ohm |
4 A |
DUAL |
R-PDSO-G3 |
|||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.9 ohm |
.43 A |
DUAL |
R-PDSO-F6 |
1 |
Not Qualified |
ESD PROTECTION, LOW THRESHOLD |
e3 |
260 |
20 pF |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
30 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
1.2 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
25 pF |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
5 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
5 pF |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
3.8 W |
1 |
8.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
8.2 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
SILICON |
40 ohm |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
||||||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
225 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.4 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
8 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-92 |
e0 |
235 |
10 pF |
||||||||||||||||||||
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.55 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1.1 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.3 ohm |
.775 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
40 pF |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
120 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.006 ohm |
DUAL |
R-PDSO-F5 |
DRAIN |
ULTRA LOW RESISTANCE |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.54 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.55 ohm |
.54 A |
DUAL |
R-PDSO-F6 |
1 |
e3 |
30 |
260 |
20 pF |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD SILVER |
.0075 ohm |
12 A |
DUAL |
R-PDSO-N6 |
1 |
DRAIN SOURCE |
e4 |
30 |
260 |
70 pF |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.6 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
6.4 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.7 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.06 ohm |
2.7 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
5 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
240 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
10 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
20 pF |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.35 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
7.2 ohm |
.35 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.73 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.11 ohm |
1.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
25 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.1 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
.1 A |
1 |
e6 |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.96 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.4 W |
150 Cel |
SILICON |
-55 Cel |
2 ohm |
.51 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
5 pF |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE, EUROPEAN PART NUMBER |
TO-92 |
3 pF |
||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
YES |
2.2 W |
4.4 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
4.4 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
2.7 ohm |
.1 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
75 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0051 ohm |
12 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18.6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.0045 ohm |
18.6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e4 |
30 |
260 |
670 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.9 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
26 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
.009 ohm |
12 A |
DUAL |
S-PDSO-N4 |
1 |
DRAIN |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
55 pF |
|||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.95 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.2 ohm |
1.95 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.1 ohm |
1.5 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.06 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
5 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-226AA |
e0 |
235 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
120 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.012 ohm |
DUAL |
S-PDSO-F5 |
DRAIN |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE, EUROPEAN PART NUMBER |
TO-92 |
3 pF |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.071 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
43 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
79 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.0055 ohm |
11 A |
DUAL |
S-XDSO-N5 |
1 |
DRAIN |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
235 |
2 pF |
||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.75 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.26 ohm |
.75 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e0 |
235 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
1.4 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e3 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.7 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.35 ohm |
.7 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
12 pF |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.42 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.1 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e0 |
235 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
4 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.062 ohm |
2.6 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.